All IGBT. VS-GT105LA120UX Datasheet

 

VS-GT105LA120UX Datasheet and Replacement


   Type Designator: VS-GT105LA120UX
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 260 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
   |Ic|ⓘ - Maximum Collector Current: 92 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.45 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 8 V
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 55 nS
   Qgⓘ - Total Gate Charge, typ: 400 nC
   Package: SOT-227
      - IGBT Cross-Reference

 

VS-GT105LA120UX Datasheet (PDF)

 0.1. Size:154K  vishay
vs-gt105la120ux.pdf pdf_icon

VS-GT105LA120UX

VS-GT105LA120UXwww.vishay.comVishay Semiconductors"Low Side Chopper" IGBT SOT-227(Trench IGBT), 100 AFEATURES Trench IGBT technology Very low VCE(on) Square RBSOA HEXFRED clamping diode 10 s short circuit capability Fully isolated package Speed 4 kHz to 30 kHzSOT-227 Very low internal inductance ( 5 nH typical) Industry standard ou

 6.1. Size:153K  vishay
vs-gt105na120ux.pdf pdf_icon

VS-GT105LA120UX

VS-GT105NA120UXwww.vishay.comVishay Semiconductors"High Side Chopper" IGBT SOT-227(Trench IGBT), 100 AFEATURES Trench IGBT technology Very low VCE(on) Square RBSOA HEXFRED clamping diode 10 s short circuit capability Fully isolated packageSOT-227 Speed 4 kHz to 30 kHz Very low internal inductance ( 5 nH typical) Industry standard ou

 7.1. Size:181K  vishay
vs-gt100tp60n.pdf pdf_icon

VS-GT105LA120UX

VS-GT100TP60Nwww.vishay.comVishay SemiconductorsHalf Bridge IGBT Power Module, 600 V, 100 AFEATURES Low VCE(on) trench IGBT technology 5 s short circuit capability VCE(on) with positive temperature coefficient Maximum junction temperature 175 C Low inductance case Fast and soft reverse recovery antiparallel FWD Isolated copper baseplate using DCB (

 7.2. Size:184K  vishay
vs-gt100tp120n.pdf pdf_icon

VS-GT105LA120UX

VS-GT100TP120Nwww.vishay.comVishay SemiconductorsHalf Bridge IGBT Power Module, 1200 V, 100 AFEATURES Low VCE(sat) trench IGBT technology 10 s short circuit capability VCE(sat) with positive temperature coefficient Maximum junction temperature 175 C Low inductance case Fast and soft reverse recovery antiparallel FWD Isolated copper baseplate using

Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , GT30F131 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

History: JT010N065WED | MMIX4B22N300 | 7MBP100VDA060-50 | MITB10WB1200TMH | BSM300GA170DLC | STGBL6NC60DI

Keywords - VS-GT105LA120UX transistor datasheet

 VS-GT105LA120UX cross reference
 VS-GT105LA120UX equivalent finder
 VS-GT105LA120UX lookup
 VS-GT105LA120UX substitution
 VS-GT105LA120UX replacement

 

 
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