VS-GT105LA120UX PDF and Equivalents Search

 

VS-GT105LA120UX Specs and Replacement

Type Designator: VS-GT105LA120UX

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 260 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V

|Ic| ⓘ - Maximum Collector Current: 92 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.45 V @25℃

tr ⓘ - Rise Time, typ: 55 nS

Package: SOT-227

 VS-GT105LA120UX Substitution

- IGBT ⓘ Cross-Reference Search

 

VS-GT105LA120UX datasheet

 0.1. Size:154K  vishay
vs-gt105la120ux.pdf pdf_icon

VS-GT105LA120UX

VS-GT105LA120UX www.vishay.com Vishay Semiconductors "Low Side Chopper" IGBT SOT-227 (Trench IGBT), 100 A FEATURES Trench IGBT technology Very low VCE(on) Square RBSOA HEXFRED clamping diode 10 s short circuit capability Fully isolated package Speed 4 kHz to 30 kHz SOT-227 Very low internal inductance ( 5 nH typical) Industry standard ou... See More ⇒

 6.1. Size:153K  vishay
vs-gt105na120ux.pdf pdf_icon

VS-GT105LA120UX

VS-GT105NA120UX www.vishay.com Vishay Semiconductors "High Side Chopper" IGBT SOT-227 (Trench IGBT), 100 A FEATURES Trench IGBT technology Very low VCE(on) Square RBSOA HEXFRED clamping diode 10 s short circuit capability Fully isolated package SOT-227 Speed 4 kHz to 30 kHz Very low internal inductance ( 5 nH typical) Industry standard ou... See More ⇒

 7.1. Size:181K  vishay
vs-gt100tp60n.pdf pdf_icon

VS-GT105LA120UX

VS-GT100TP60N www.vishay.com Vishay Semiconductors Half Bridge IGBT Power Module, 600 V, 100 A FEATURES Low VCE(on) trench IGBT technology 5 s short circuit capability VCE(on) with positive temperature coefficient Maximum junction temperature 175 C Low inductance case Fast and soft reverse recovery antiparallel FWD Isolated copper baseplate using DCB (... See More ⇒

 7.2. Size:184K  vishay
vs-gt100tp120n.pdf pdf_icon

VS-GT105LA120UX

VS-GT100TP120N www.vishay.com Vishay Semiconductors Half Bridge IGBT Power Module, 1200 V, 100 A FEATURES Low VCE(sat) trench IGBT technology 10 s short circuit capability VCE(sat) with positive temperature coefficient Maximum junction temperature 175 C Low inductance case Fast and soft reverse recovery antiparallel FWD Isolated copper baseplate using ... See More ⇒

Specs: SG75S12S , SG7N06DP , SG7N06P , SGP23N60UFD , VS-GT100LA120UX , VS-GT100NA120UX , VS-GT100TP120N , VS-GT100TP60N , STGW60V60DF , VS-GT105NA120UX , VS-GT140DA60U , VS-GT175DA120U , VS-GT300FD060N , VS-GT300YH120N , VS-GT400TH120N , VS-GT400TH120U , VS-GT400TH60N .

Keywords - VS-GT105LA120UX transistor spec

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