VS-GT105LA120UX IGBT. Datasheet pdf. Equivalent
Type Designator: VS-GT105LA120UX
Type: IGBT
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 260 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
|Ic|ⓘ - Maximum Collector Current: 92 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.45 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 8 V
Tjⓘ - Maximum Junction Temperature: 150 ℃
trⓘ - Rise Time, typ: 55 nS
Qgⓘ - Total Gate Charge, typ: 400 nC
Package: SOT-227
VS-GT105LA120UX Transistor Equivalent Substitute - IGBT Cross-Reference Search
VS-GT105LA120UX Datasheet (PDF)
vs-gt105la120ux.pdf
VS-GT105LA120UXwww.vishay.comVishay Semiconductors"Low Side Chopper" IGBT SOT-227(Trench IGBT), 100 AFEATURES Trench IGBT technology Very low VCE(on) Square RBSOA HEXFRED clamping diode 10 s short circuit capability Fully isolated package Speed 4 kHz to 30 kHzSOT-227 Very low internal inductance ( 5 nH typical) Industry standard ou
vs-gt105na120ux.pdf
VS-GT105NA120UXwww.vishay.comVishay Semiconductors"High Side Chopper" IGBT SOT-227(Trench IGBT), 100 AFEATURES Trench IGBT technology Very low VCE(on) Square RBSOA HEXFRED clamping diode 10 s short circuit capability Fully isolated packageSOT-227 Speed 4 kHz to 30 kHz Very low internal inductance ( 5 nH typical) Industry standard ou
vs-gt100tp60n.pdf
VS-GT100TP60Nwww.vishay.comVishay SemiconductorsHalf Bridge IGBT Power Module, 600 V, 100 AFEATURES Low VCE(on) trench IGBT technology 5 s short circuit capability VCE(on) with positive temperature coefficient Maximum junction temperature 175 C Low inductance case Fast and soft reverse recovery antiparallel FWD Isolated copper baseplate using DCB (
vs-gt100tp120n.pdf
VS-GT100TP120Nwww.vishay.comVishay SemiconductorsHalf Bridge IGBT Power Module, 1200 V, 100 AFEATURES Low VCE(sat) trench IGBT technology 10 s short circuit capability VCE(sat) with positive temperature coefficient Maximum junction temperature 175 C Low inductance case Fast and soft reverse recovery antiparallel FWD Isolated copper baseplate using
vs-gt100la120ux.pdf
VS-GT100LA120UXwww.vishay.comVishay SemiconductorsLow Side Chopper IGBT SOT-227(Trench IGBT), 100 AFEATURES Trench IGBT technology Very low VCE(on) Square RBSOA HEXFRED clamping diode 10 s short circuit capability Fully isolated packageSOT-227 Very low internal inductance ( 5 nH typical) Industry standard outline UL approved
vs-gt100na120ux.pdf
VS-GT100NA120UXwww.vishay.comVishay SemiconductorsHigh Side Chopper IGBT SOT-227(Trench IGBT), 100 AFEATURES Trench IGBT technology Very low VCE(on) Square RBSOA HEXFRED clamping diode 10 s short circuit capability Fully isolated packageSOT-227 Very low internal inductance ( 5 nH typical) Industry standard outline UL approved
Datasheet: SG75S12S , SG7N06DP , SG7N06P , SGP23N60UFD , VS-GT100LA120UX , VS-GT100NA120UX , VS-GT100TP120N , VS-GT100TP60N , TGPF30N40P , VS-GT105NA120UX , VS-GT140DA60U , VS-GT175DA120U , VS-GT300FD060N , VS-GT300YH120N , VS-GT400TH120N , VS-GT400TH120U , VS-GT400TH60N .
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