All IGBT. VS-GT175DA120U Datasheet

 

VS-GT175DA120U Datasheet and Replacement


   Type Designator: VS-GT175DA120U
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 522 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 175 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.73 V @25℃
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 65 nS
   Package: SOT-227
      - IGBT Cross-Reference

 

VS-GT175DA120U Datasheet (PDF)

 ..1. Size:274K  vishay
vs-gt175da120u.pdf pdf_icon

VS-GT175DA120U

VS-GT175DA120Uwww.vishay.comVishay SemiconductorsInsulated Gate Bipolar Transistor (Trench IGBT), 175 AFEATURES Trench IGBT technology with positivetemperature coefficient Square RBSOA 10 s short circuit capability HEXFRED antiparallel diodes with ultrasoft reverse recovery TJ maximum = 150 CSOT-227 Fully isolated package Speed 4 kHz to 30

 8.1. Size:181K  vishay
vs-gt100tp60n.pdf pdf_icon

VS-GT175DA120U

VS-GT100TP60Nwww.vishay.comVishay SemiconductorsHalf Bridge IGBT Power Module, 600 V, 100 AFEATURES Low VCE(on) trench IGBT technology 5 s short circuit capability VCE(on) with positive temperature coefficient Maximum junction temperature 175 C Low inductance case Fast and soft reverse recovery antiparallel FWD Isolated copper baseplate using DCB (

 8.2. Size:153K  vishay
vs-gt105na120ux.pdf pdf_icon

VS-GT175DA120U

VS-GT105NA120UXwww.vishay.comVishay Semiconductors"High Side Chopper" IGBT SOT-227(Trench IGBT), 100 AFEATURES Trench IGBT technology Very low VCE(on) Square RBSOA HEXFRED clamping diode 10 s short circuit capability Fully isolated packageSOT-227 Speed 4 kHz to 30 kHz Very low internal inductance ( 5 nH typical) Industry standard ou

 8.3. Size:154K  vishay
vs-gt105la120ux.pdf pdf_icon

VS-GT175DA120U

VS-GT105LA120UXwww.vishay.comVishay Semiconductors"Low Side Chopper" IGBT SOT-227(Trench IGBT), 100 AFEATURES Trench IGBT technology Very low VCE(on) Square RBSOA HEXFRED clamping diode 10 s short circuit capability Fully isolated package Speed 4 kHz to 30 kHzSOT-227 Very low internal inductance ( 5 nH typical) Industry standard ou

Datasheet: AP05G120SW-HF , TSG10N120CN , AP05G120NSW-HF , AP20GT60SW , AP20GT60W , CI15T60 , MMIX4B12N300 , NGD8205A , IHW20N135R5 , IXYP8N90C3D1 , APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W .

History: MMG75J120U6HN | 2SH29

Keywords - VS-GT175DA120U transistor datasheet

 VS-GT175DA120U cross reference
 VS-GT175DA120U equivalent finder
 VS-GT175DA120U lookup
 VS-GT175DA120U substitution
 VS-GT175DA120U replacement

 

 
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