VS-GT175DA120U - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.
Наименование: VS-GT175DA120U
Тип транзистора: IGBT
Тип управляющего канала: N
Pcⓘ - Максимальная рассеиваемая мощность: 522 W
|Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 1200 V
|Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V
|Ic|ⓘ - Максимальный постоянный ток коллектора: 175 A @25℃
|VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 1.73 V @25℃
Tjⓘ - Максимальная температура перехода: 150 ℃
trⓘ - Время нарастания типовое: 65 nS
Тип корпуса: SOT-227
Аналог (замена) для VS-GT175DA120U
VS-GT175DA120U Datasheet (PDF)
vs-gt175da120u.pdf
VS-GT175DA120Uwww.vishay.comVishay SemiconductorsInsulated Gate Bipolar Transistor (Trench IGBT), 175 AFEATURES Trench IGBT technology with positivetemperature coefficient Square RBSOA 10 s short circuit capability HEXFRED antiparallel diodes with ultrasoft reverse recovery TJ maximum = 150 CSOT-227 Fully isolated package Speed 4 kHz to 30
vs-gt100tp60n.pdf
VS-GT100TP60Nwww.vishay.comVishay SemiconductorsHalf Bridge IGBT Power Module, 600 V, 100 AFEATURES Low VCE(on) trench IGBT technology 5 s short circuit capability VCE(on) with positive temperature coefficient Maximum junction temperature 175 C Low inductance case Fast and soft reverse recovery antiparallel FWD Isolated copper baseplate using DCB (
vs-gt105na120ux.pdf
VS-GT105NA120UXwww.vishay.comVishay Semiconductors"High Side Chopper" IGBT SOT-227(Trench IGBT), 100 AFEATURES Trench IGBT technology Very low VCE(on) Square RBSOA HEXFRED clamping diode 10 s short circuit capability Fully isolated packageSOT-227 Speed 4 kHz to 30 kHz Very low internal inductance ( 5 nH typical) Industry standard ou
vs-gt105la120ux.pdf
VS-GT105LA120UXwww.vishay.comVishay Semiconductors"Low Side Chopper" IGBT SOT-227(Trench IGBT), 100 AFEATURES Trench IGBT technology Very low VCE(on) Square RBSOA HEXFRED clamping diode 10 s short circuit capability Fully isolated package Speed 4 kHz to 30 kHzSOT-227 Very low internal inductance ( 5 nH typical) Industry standard ou
vs-gt100tp120n.pdf
VS-GT100TP120Nwww.vishay.comVishay SemiconductorsHalf Bridge IGBT Power Module, 1200 V, 100 AFEATURES Low VCE(sat) trench IGBT technology 10 s short circuit capability VCE(sat) with positive temperature coefficient Maximum junction temperature 175 C Low inductance case Fast and soft reverse recovery antiparallel FWD Isolated copper baseplate using
vs-gt100la120ux.pdf
VS-GT100LA120UXwww.vishay.comVishay SemiconductorsLow Side Chopper IGBT SOT-227(Trench IGBT), 100 AFEATURES Trench IGBT technology Very low VCE(on) Square RBSOA HEXFRED clamping diode 10 s short circuit capability Fully isolated packageSOT-227 Very low internal inductance ( 5 nH typical) Industry standard outline UL approved
vs-gt140da60u.pdf
VS-GT140DA60Uwww.vishay.comVishay SemiconductorsInsulated Gate Bipolar Transistor (Trench IGBT), 140 AFEATURES Trench IGBT technology with positivetemperature coefficient Square RBSOA 3 s short circuit capability FRED Pt antiparallel diodes with ultrasoft reverse recovery TJ maximum = 175 CSOT-227 Fully isolated package Very low internal i
vs-gt100na120ux.pdf
VS-GT100NA120UXwww.vishay.comVishay SemiconductorsHigh Side Chopper IGBT SOT-227(Trench IGBT), 100 AFEATURES Trench IGBT technology Very low VCE(on) Square RBSOA HEXFRED clamping diode 10 s short circuit capability Fully isolated packageSOT-227 Very low internal inductance ( 5 nH typical) Industry standard outline UL approved
Другие IGBT... SGP23N60UFD , VS-GT100LA120UX , VS-GT100NA120UX , VS-GT100TP120N , VS-GT100TP60N , VS-GT105LA120UX , VS-GT105NA120UX , VS-GT140DA60U , GT60N321 , VS-GT300FD060N , VS-GT300YH120N , VS-GT400TH120N , VS-GT400TH120U , VS-GT400TH60N , VS-GT50TP120N , VS-GT50TP60N , VS-GT75NP120N .
Список транзисторов
Обновления
IGBT: AOTS40B65H1 | AOTF8B65MQ1 | AOTF5B65M2 | AOTF5B65M1 | AOTF20B65M2 | AOTF20B65M1 | AOTF20B65LN2 | AOTF15B65MQ1 | AOTF15B65M3 | AOTF15B65M2 | AOTF15B60D2