VS-GT300FD060N PDF and Equivalents Search

 

VS-GT300FD060N Specs and Replacement

Type Designator: VS-GT300FD060N

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 792 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 288 A @25℃

Tj ⓘ - Maximum Junction Temperature: 175 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.72 V @25℃

tr ⓘ - Rise Time, typ: 120 nS

Coesⓘ - Output Capacitance, typ: 1700 pF

Package: MODULE

 VS-GT300FD060N Substitution

- IGBT ⓘ Cross-Reference Search

 

VS-GT300FD060N datasheet

 ..1. Size:163K  vishay
vs-gt300fd060n.pdf pdf_icon

VS-GT300FD060N

VS-GT300FD060N www.vishay.com Vishay Semiconductors DIAP Low Profile 3-Levels Half Bridge Inverter Stage, 300 A FEATURES Trench plus Field Stop IGBT technology FRED Pt antiparallel and clamping diodes Short circuit capability Low stray internal inductances Low switching loss UL approved file E78996 Material categorization for definitions of compliance ... See More ⇒

 6.1. Size:189K  vishay
vs-gt300yh120n.pdf pdf_icon

VS-GT300FD060N

VS-GT300YH120N www.vishay.com Vishay Semiconductors DIAP Trench IGBT Power Module - 1200 V, 300 A Current Fed Inverter Topology FEATURES Trench IGBT technology with positive temperature coefficient Low switching losses Maximum junction temperature 150 C 10 s short circuit capability Low inductance case Double INT-A-PAK HEXFRED antiparallel and series ... See More ⇒

 9.1. Size:1021K  vishay
vs-gt50tp60n.pdf pdf_icon

VS-GT300FD060N

VS-GT50TP60N www.vishay.com Vishay Semiconductors Half Bridge IGBT Power Module, 600 V, 50 A FEATURES Low VCE(on) trench IGBT technology 5 s short circuit capability VCE(on) with positive temperature coefficient Maximum junction temperature 175 C Low inductance case Fast and soft reverse recovery antiparallel FWD Isolated copper baseplate using DCB (Di... See More ⇒

 9.2. Size:181K  vishay
vs-gt100tp60n.pdf pdf_icon

VS-GT300FD060N

VS-GT100TP60N www.vishay.com Vishay Semiconductors Half Bridge IGBT Power Module, 600 V, 100 A FEATURES Low VCE(on) trench IGBT technology 5 s short circuit capability VCE(on) with positive temperature coefficient Maximum junction temperature 175 C Low inductance case Fast and soft reverse recovery antiparallel FWD Isolated copper baseplate using DCB (... See More ⇒

Specs: VS-GT100LA120UX , VS-GT100NA120UX , VS-GT100TP120N , VS-GT100TP60N , VS-GT105LA120UX , VS-GT105NA120UX , VS-GT140DA60U , VS-GT175DA120U , TGD30N40P , VS-GT300YH120N , VS-GT400TH120N , VS-GT400TH120U , VS-GT400TH60N , VS-GT50TP120N , VS-GT50TP60N , VS-GT75NP120N , DL2G100SH6A .

Keywords - VS-GT300FD060N transistor spec

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