All IGBT. DL2G100SH6N Datasheet

 

DL2G100SH6N Datasheet and Replacement


   Type Designator: DL2G100SH6N
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 445 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 100 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.1 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 8.5 V
   Tj ⓘ - Maximum Junction Temperature: 150 ℃
   tr ⓘ - Rise Time, typ: 50 nS
   Coesⓘ - Output Capacitance, typ: 950 pF
   Qg ⓘ - Total Gate Charge, typ: 400 nC
   Package: MODULE
 

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DL2G100SH6N Datasheet (PDF)

 ..1. Size:687K  dawin
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DL2G100SH6N

Discontinuance (Aug. 31, 2013) DL2G100SH6N Jan. 2012 High Power Rugged Type IGBT Module Description Equivalent Circuit and Package DAWINS IGBT 6DM-2 Package devices are optimized to reduce losses Equivalent Circuit and switching noise in high frequency power conditioning electrical systems. These IGBT modules are ideally suited for power inverters, motors drives and o

 4.1. Size:635K  dawin
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DL2G100SH6N

D WTMD WTMDL2G100SH6ADAWIN ElectronicsDAWIN ElectronicsApr. 2008High Power NPT & Lugged Type Dual Co-pack IGBTDescriptionEquivalent Circuit and Package DAWINS IGBT 6DM-2 Package devices are optimized to reduce losses and switching noise in high frequency power conditioning electrical systems. Equivalent Circuit These IGBT modules are ideally suited for power inverters

Datasheet: VS-GT300YH120N , VS-GT400TH120N , VS-GT400TH120U , VS-GT400TH60N , VS-GT50TP120N , VS-GT50TP60N , VS-GT75NP120N , DL2G100SH6A , IRG4PC50W , DL2G50SH12A , DL2G50SH6A , DL2G50SH6N , DL2G75SH12A , DL2G75SH6A , DL2G75SH6N , DM1GL75SH12A , DM2G100SH12A .

History: IRGS4B60KD1PBF | APT25GP90BG | IXXN110N65C4H1

Keywords - DL2G100SH6N transistor datasheet

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