DL2G100SH6N PDF and Equivalents Search

 

DL2G100SH6N Specs and Replacement

Type Designator: DL2G100SH6N

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 445 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 100 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.1 V @25℃

tr ⓘ - Rise Time, typ: 50 nS

Coesⓘ - Output Capacitance, typ: 950 pF

Package: MODULE

 DL2G100SH6N Substitution

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DL2G100SH6N datasheet

 ..1. Size:687K  dawin
 dl2g100sh6n.pdf pdf_icon

DL2G100SH6N

Discontinuance (Aug. 31, 2013) DL2G100SH6N Jan. 2012 High Power Rugged Type IGBT Module Description Equivalent Circuit and Package DAWIN S IGBT 6DM-2 Package devices are optimized to reduce losses Equivalent Circuit and switching noise in high frequency power conditioning electrical systems. These IGBT modules are ideally suited for power inverters, motors drives and o... See More ⇒

 4.1. Size:635K  dawin
 dl2g100sh6a.pdf pdf_icon

DL2G100SH6N

D WTM D WTM DL2G100SH6A DAWIN Electronics DAWIN Electronics Apr. 2008 High Power NPT & Lugged Type Dual Co-pack IGBT Description Equivalent Circuit and Package DAWIN S IGBT 6DM-2 Package devices are optimized to reduce losses and switching noise in high frequency power conditioning electrical systems. Equivalent Circuit These IGBT modules are ideally suited for power inverters... See More ⇒

Specs: VS-GT300YH120N , VS-GT400TH120N , VS-GT400TH120U , VS-GT400TH60N , VS-GT50TP120N , VS-GT50TP60N , VS-GT75NP120N , DL2G100SH6A , TGAN40N60FD , DL2G50SH12A , DL2G50SH6A , DL2G50SH6N , DL2G75SH12A , DL2G75SH6A , DL2G75SH6N , DM1GL75SH12A , DM2G100SH12A .

Keywords - DL2G100SH6N transistor spec

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