DL2G50SH6A IGBT. Datasheet pdf. Equivalent
Type Designator: DL2G50SH6A
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 250 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 50 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.95 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 7 V
Tjⓘ - Maximum Junction Temperature: 150 ℃
trⓘ - Rise Time, typ: 25 nS
Coesⓘ - Output Capacitance, typ: 750 pF
Qgⓘ - Total Gate Charge, typ: 100 nC
Package: MODULE
DL2G50SH6A Transistor Equivalent Substitute - IGBT Cross-Reference Search
DL2G50SH6A Datasheet (PDF)
dl2g50sh6a.pdf
Discontinuance (Aug. 31, 2013) DL2G50SH6A May. 2009 High Power NPT & Lugged Type Dual Co-pack IGBT Description Equivalent Circuit and Package DAWINS IGBT 6DM-2 Package devices are optimized to reduce losses and switching noise in high frequency power conditioning electrical systems. Equivalent Circuit These IGBT modules are ideally suited for power inverters, motors driv
dl2g50sh6n.pdf
Discontinuance (Aug. 31, 2013) DL2G50SH6N Jan. 2012 High Power Rugged Type IGBT Module Description Equivalent Circuit and Package DAWINS IGBT 6DM-2 Package devices are optimized to reduce losses Equivalent Circuit and switching noise in high frequency power conditioning electrical systems. These IGBT modules are ideally suited for power inverters, motors drives and othe
dl2g50sh12a.pdf
D WTMD WTMDL2G50SH12ADAWIN ElectronicsDAWIN ElectronicsApr. 2008High Power SPT+ & Lugged Type Dual Co-pack IGBTDescriptionEquivalent Circuit and Package DAWINS IGBT 6DM-2 Package devices are optimized to reduce losses and switching noise in high frequency power conditioning electrical systems. Equivalent Circuit These IGBT modules are ideally suited for power inverter
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