HGTP1N120CND Datasheet. Specs and Replacement

Type Designator: HGTP1N120CND  📄📄 

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 60 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 6.2 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.05 V @25℃

tr ⓘ - Rise Time, typ: 11 nS

Package: TO220

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HGTP1N120CND datasheet

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HGTP1N120CND

HGTP1N120CND, HGT1S1N120CNDS Data Sheet December 2001 6.2A, 1200V, NPT Series N-Channel IGBT Features with Anti-Parallel Hyperfast Diode 6.2A, 1200V, TC = 25oC The HGTP1N120CND and the HGT1S1N120CNDS are 1200V Switching SOA Capability Non-Punch Through (NPT) IGBT designs. They are new Typical EOFF . . . . . . . . . . . . . . . . . . 200 J at TJ = 150oC members of the MOS... See More ⇒

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HGTP1N120CND

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HGTP1N120CND

HGTP1N120BND, HGT1S1N120BNDS Data Sheet January 2000 File Number 4650.2 5.3A, 1200V, NPT Series N-Channel IGBT Features with Anti-Parallel Hyperfast Diode 5.3A, 1200V, TC = 25oC The HGTP1N120BND and the HGT1S1N120BNDS are 1200V Switching SOA Capability Non-Punch Through (NPT) IGBT designs. They are new Typical EOFF. . . . . . . . . . . . . . . . . . . 120 J at TJ = 150oC ... See More ⇒

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HGTP1N120CND

HGTD1N120BNS, HGTP1N120BN Data Sheet January 2001 5.3A, 1200V, NPT Series N-Channel IGBT Features The HGTD1N120BNS and HGTP1N120BN are Non-Punch 5.3A, 1200V, TC = 25oC Through (NPT) IGBT designs. They are new members of the 1200V Switching SOA Capability MOS gated high voltage switching IGBT family. IGBTs Typical EOFF . . . . . . . . . . . . . . . . . . 120 J at TJ = 150... See More ⇒

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Specs: HGTP12N60C3, HGTP12N60C3D, HGTP12N60D1, HGTP14N36G3VL, HGTP14N40F3VL, HGTP1N120BN, HGTP1N120BND, HGTP1N120CN, G50T65D, HGTP20N35G3VL, HGTP20N60A4, HGTP20N60B3, HGTP20N60C3, HGTP20N60C3R, HGTP2N120BN, HGTP2N120BND, HGTP2N120CN

Keywords - HGTP1N120CND transistor spec

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