HGTP1N120CND - аналоги и описание IGBT

HGTP1N120CND, HGT1S1N120CNDS Data Sheet December 2001 6.2A, 1200V, NPT Series N-Channel IGBT Features with Anti-Parallel Hyperfast Diode 6.2A, 1200V, TC = 25oC The HGTP1N120CND and the HGT1S1N120CNDS are 1200V Switching SOA Capability Non-Punch Through (NPT) IGBT designs. They are new Typical EOFF . . . . . . . . . . . . . . . . . . 200 J at TJ = 150oC members of the MOS

HGTP1N120BND, HGT1S1N120BNDS Data Sheet January 2000 File Number 4650.2 5.3A, 1200V, NPT Series N-Channel IGBT Features with Anti-Parallel Hyperfast Diode 5.3A, 1200V, TC = 25oC The HGTP1N120BND and the HGT1S1N120BNDS are 1200V Switching SOA Capability Non-Punch Through (NPT) IGBT designs. They are new Typical EOFF. . . . . . . . . . . . . . . . . . . 120 J at TJ = 150oC

HGTD1N120BNS, HGTP1N120BN Data Sheet January 2001 5.3A, 1200V, NPT Series N-Channel IGBT Features The HGTD1N120BNS and HGTP1N120BN are Non-Punch 5.3A, 1200V, TC = 25oC Through (NPT) IGBT designs. They are new members of the 1200V Switching SOA Capability MOS gated high voltage switching IGBT family. IGBTs Typical EOFF . . . . . . . . . . . . . . . . . . 120 J at TJ = 150

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