DM2G150SH12AE Specs and Replacement
Type Designator: DM2G150SH12AE
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 1100 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 150 A @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.9 V @25℃
tr ⓘ - Rise Time, typ: 100 nS
Coesⓘ - Output Capacitance, typ: 800 pF
Package: MODULE DM2G150SH12AE Substitution - IGBTⓘ Cross-Reference Search
DM2G150SH12AE datasheet
dm2g150sh12ae.pdf
Preliminary D WTM D WTM DAWIN Electronics DAWIN Electronics DM2G150SH12AE Dec. 2008 High Power SPT+ & Lugged Type IGBT Module Description Equivalent Circuit and Package DAWIN S IGBT 7DM-2 Package devices are optimized to reduce losses and switching noise in high frequency power conditioning electrical systems. Equivalent Circuit These IGBT modules are ideally suited for power ... See More ⇒
dm2g150sh12a.pdf
Preliminary D WTM D WTM Apr. 2008 DM2G150SH12A DAWIN Electronics DAWIN Electronics High Power SPT+ & Lugged Type IGBT Module Description Equivalent Circuit and Package DAWIN S IGBT 7DM-3 Package devices are optimized to reduce losses and switching noise in high frequency power conditioning electrical systems. Equivalent Circuit These IGBT modules are ideally suited for power ... See More ⇒
dm2g150sh6n.pdf
D WTM D WTM DM2G150SH6N DAWIN Electronics DAWIN Electronics Jan. 2012 High Power Rugged Type IGBT Module Equivalent Circuit and Package Description DAWIN S IGBT 7DM-2 Package devices are optimized to reduce losses Equivalent Circuit and switching noise in high frequency power conditioning electrical systems. These IGBT modules are ideally suited for power inverters, motors dri... See More ⇒
dm2g150sh6a.pdf
D WTM D WTM DM2G150SH6A DAWIN Electronics DAWIN Electronics Aug. 2009 High Power NPT & Rugged Type IGBT Module Description Equivalent Circuit and Package DAWIN S IGBT 7DM-2 Package devices are optimized to reduce losses Equivalent Circuit and switching noise in high frequency power conditioning electrical systems. These IGBT modules are ideally suited for power inverters, moto... See More ⇒
Specs: DL2G75SH12A, DL2G75SH6A, DL2G75SH6N, DM1GL75SH12A, DM2G100SH12A, DM2G100SH6A, DM2G100SH6N, DM2G150SH12A, FGH40N60UFD, DM2G150SH6A, DM2G50SH12A, DM2G50SH6A, DM2G50SH6N, DM2G75SH12A, DM2G75SH6A, DM2G75SH6N, CY20AAJ-8H
Keywords - DM2G150SH12AE transistor spec
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History: GT15J102 | DM2G100SH12A | GT20J301 | DM2G100SH6N | GT20G101 | GT15Q301 | GT20D101Y
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