DM2G150SH12AE - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.
Наименование: DM2G150SH12AE
Тип транзистора: IGBT
Тип управляющего канала: N
Pcⓘ - Максимальная рассеиваемая мощность: 1100 W
|Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 1200 V
|Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V
|Ic|ⓘ - Максимальный постоянный ток коллектора: 150 A @25℃
|VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 1.9 V @25℃
Tjⓘ - Максимальная температура перехода: 150 ℃
trⓘ - Время нарастания типовое: 100 nS
Coesⓘ - Выходная емкость, типовая: 800 pF
Тип корпуса: MODULE
Аналог (замена) для DM2G150SH12AE
DM2G150SH12AE Datasheet (PDF)
dm2g150sh12ae.pdf
PreliminaryD WTMD WTMDAWIN ElectronicsDAWIN Electronics DM2G150SH12AEDec. 2008High Power SPT+ & Lugged Type IGBT ModuleDescriptionEquivalent Circuit and Package DAWINS IGBT 7DM-2 Package devices are optimized to reduce losses and switching noise in high frequency power conditioning electrical systems. Equivalent Circuit These IGBT modules are ideally suited for power
dm2g150sh12a.pdf
PreliminaryD WTMD WTMApr. 2008DM2G150SH12ADAWIN ElectronicsDAWIN ElectronicsHigh Power SPT+ & Lugged Type IGBT ModuleDescriptionEquivalent Circuit and Package DAWINS IGBT 7DM-3 Package devices are optimized to reduce losses and switching noise in high frequency power conditioning electrical systems. Equivalent Circuit These IGBT modules are ideally suited for power
dm2g150sh6n.pdf
D WTMD WTMDM2G150SH6NDAWIN ElectronicsDAWIN ElectronicsJan. 2012High Power Rugged Type IGBT ModuleEquivalent Circuit and Package DescriptionDAWINS IGBT 7DM-2 Package devices are optimized to reduce losses Equivalent Circuit and switching noise in high frequency power conditioning electrical systems. These IGBT modules are ideally suited for power inverters, motors dri
dm2g150sh6a.pdf
D WTMD WTMDM2G150SH6ADAWIN ElectronicsDAWIN ElectronicsAug. 2009High Power NPT & Rugged Type IGBT ModuleDescriptionEquivalent Circuit and Package DAWINS IGBT 7DM-2 Package devices are optimized to reduce losses Equivalent Circuit and switching noise in high frequency power conditioning electrical systems. These IGBT modules are ideally suited for power inverters, moto
dm2g150sh6ne.pdf
D WTMD WTMDM2G150SH6NEDAWIN ElectronicsDAWIN ElectronicsJan. 2012High Power Rugged Type IGBT ModuleEquivalent Circuit and Package DescriptionDAWINS IGBT module devices are optimized to reduce losses Equivalent Circuit and switching noise in high frequency power conditioning electrical systems. These IGBT modules are ideally suited for power inverters, motors drives6
Другие IGBT... APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , CRG60T60AK3HD , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .
Список транзисторов
Обновления
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