DM2G50SH12A Datasheet and Replacement
Type Designator: DM2G50SH12A
Type: IGBT
Type of IGBT Channel: N
Pc ⓘ - Maximum Power Dissipation: 400 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 50 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.8 V @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
tr ⓘ - Rise Time, typ: 60 nS
Coesⓘ - Output Capacitance, typ: 300 pF
Package: MODULE
DM2G50SH12A substitution
DM2G50SH12A Datasheet (PDF)
dm2g50sh12a.pdf

DM2G50SH12AMar. 2008High Power SPT+ & Lugged Type IGBT ModuleDescriptionEquivalent Circuit and Package DAWINS IGBT 7DM-1 Package devices are optimized to reduce losses and switching noise in high frequency power conditioning electrical systems. Equivalent Circuit These IGBT modules are ideally suited for power inverters, motors drives and other applications where switching
dm2g50sh6a.pdf

DM2G50SH6AApr. 2008High Power NPT & Lugged Type IGBT ModuleDescriptionEquivalent Circuit and Package DAWINS IGBT module devices are optimized to reduce losses and switching noise in high frequency power conditioning electrical systems. Equivalent Circuit These IGBT modules are ideally suited for power inverters, motors drivesand other applications where switching losses are
dm2g50sh6n.pdf

DM2G50SH6NJan. 2012High Power Rugged Type IGBT ModuleDescription Equivalent Circuit and Package DAWINS IGBT module devices are optimized to reduce losses Equivalent Circuit and switching noise in high frequency power conditioning electrical systems. These IGBT modules are ideally suited for power inverters, motors drivesand other applications where switching losses are signif
Datasheet: DL2G75SH6N , DM1GL75SH12A , DM2G100SH12A , DM2G100SH6A , DM2G100SH6N , DM2G150SH12A , DM2G150SH12AE , DM2G150SH6A , GT50JR22 , DM2G50SH6A , DM2G50SH6N , DM2G75SH12A , DM2G75SH6A , DM2G75SH6N , CY20AAJ-8H , CY25AAJ-8F , SHD724401 .
History: 1MB08D-120
Keywords - DM2G50SH12A transistor datasheet
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History: 1MB08D-120



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