VS-GB100NH120N IGBT. Datasheet pdf. Equivalent
Type Designator: VS-GB100NH120N
Type: IGBT
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 833 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 100 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.9 V @25℃
Tjⓘ - Maximum Junction Temperature: 150 ℃
trⓘ - Rise Time, typ: 61 nS
Coesⓘ - Output Capacitance, typ: 600 pF
Package: MODULE
VS-GB100NH120N Transistor Equivalent Substitute - IGBT Cross-Reference Search
VS-GB100NH120N Datasheet (PDF)
vs-gb100nh120n.pdf
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vs-gb100th120n.pdf
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vs-gb100tp120u.pdf
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vs-gb100tp120n.pdf
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