VS-GB100NH120N Даташит. Аналоги. Параметры и характеристики.
Наименование: VS-GB100NH120N
Тип транзистора: IGBT
Тип управляющего канала: N
Pc ⓘ - Максимальная рассеиваемая мощность: 833 W
|Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 1200 V
|Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V
|Ic| ⓘ - Максимальный постоянный ток коллектора: 100 A @25℃
|VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 1.9 V @25℃
Tj ⓘ - Максимальная температура перехода: 150 ℃
tr ⓘ - Время нарастания типовое: 61 nS
Coesⓘ - Выходная емкость, типовая: 600 pF
Тип корпуса: MODULE
Аналог (замена) для VS-GB100NH120N
VS-GB100NH120N Datasheet (PDF)
vs-gb100nh120n.pdf

VS-GB100NH120Nwww.vishay.comVishay SemiconductorsMolding Type Module IGBT,Chopper in 1 Package, 1200 V and 100 AFEATURES 10 s short circuit capability VCE(on) with positive temperature coefficient Maximum junction temperature 150 C Low inductance case Fast and soft reverse recovery antiparallel FWD Isolated copper baseplate using DCB (Direct Copper
vs-gb100th120u.pdf

VS-GB100TH120Uwww.vishay.comVishay SemiconductorsMolding Type Module IGBT, 2 in 1 Package, 1200 V and 100 AFEATURES NPT IGBT technology 10 s short circuit capability Low switching losses Rugged with ultrafast performance VCE(on) with positive temperature coefficient Low inductance case Fast and soft reverse recovery antiparallel FWDDouble INT-A-P
vs-gb100lh120n.pdf

VS-GB100LH120Nwww.vishay.comVishay SemiconductorsMolding Type Module IGBT,Chopper in1 Package, 1200 V and 100 AFEATURES High short circuit capability, self limiting to 6 x IC 10 s short circuit capability VCE(on) with positive temperature coefficient Maximum junction temperature 150 C Low inductance case Fast and soft reverse recovery antiparallel FWD
vs-gb100th120n.pdf

VS-GB100TH120Nwww.vishay.comVishay SemiconductorsMolding Type Module IGBT,2-in-1 Package, 1200 V and 100 AFEATURES Low VCE(on) SPT + IGBT technology 10 s short circuit capability VCE(on) with positive temperature coefficient Maximum junction temperature 150 C Low inductance case Fast and soft reverse recovery antiparallel FWD Isolated copper base
Другие IGBT... APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , IKW30N60H3 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .
History: APT35GA90SD15 | AOD6B65MQ1E | IXGT40N60B2 | SRE30N065FSSDG | SKM300GB174D | MMG75SR120UZA | NGTB40N60FLWG
History: APT35GA90SD15 | AOD6B65MQ1E | IXGT40N60B2 | SRE30N065FSSDG | SKM300GB174D | MMG75SR120UZA | NGTB40N60FLWG



Список транзисторов
Обновления
IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE | JJT30N65SY | JJT30N65SS | JJT30N65SE | JJT40N65UH | JJT40N65UE | JJT40N65LE | JJT40N65HE | JJT40N135UE
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