VS-GB200NH120N PDF and Equivalents Search

 

VS-GB200NH120N Specs and Replacement

Type Designator: VS-GB200NH120N

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 1562 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 200 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.8 V @25℃

tr ⓘ - Rise Time, typ: 60 nS

Coesⓘ - Output Capacitance, typ: 1640 pF

Package: MODULE

 VS-GB200NH120N Substitution

- IGBT ⓘ Cross-Reference Search

 

VS-GB200NH120N datasheet

 ..1. Size:156K  vishay
vs-gb200nh120n.pdf pdf_icon

VS-GB200NH120N

VS-GB200NH120N www.vishay.com Vishay Semiconductors Molding Type Module IGBT, Chopper in 1 Package, 1200 V and 200 A FEATURES High short circuit capability, self limiting to 6 x IC 10 s short circuit capability VCE(on) with positive temperature coefficient Maximum junction temperature 150 C Low inductance case Fast and soft reverse recovery antiparallel FW... See More ⇒

 6.1. Size:156K  vishay
vs-gb200lh120n.pdf pdf_icon

VS-GB200NH120N

VS-GB200LH120N www.vishay.com Vishay Semiconductors Molding Type Module IGBT, Chopper in 1 Package, 1200 V and 200 A FEATURES High short circuit capability, self limiting to 6 x IC 10 s short circuit capability VCE(on) with positive temperature coefficient Maximum junction temperature 150 C Low inductance case Fast and soft reverse recovery antiparallel FW... See More ⇒

 6.2. Size:155K  vishay
vs-gb200th120n.pdf pdf_icon

VS-GB200NH120N

VS-GB200TH120N www.vishay.com Vishay Semiconductors Molding Type Module IGBT, 2-in-1 Package, 1200 V and 200 A FEATURES Low VCE(on) SPT+ IGBT technology 10 s short circuit capability VCE(on) with positive temperature coefficient Maximum junction temperature 150 C Low inductance case Fast and soft reverse recovery antiparallel FWD Double INT-A-PAK Iso... See More ⇒

 6.3. Size:194K  vishay
vs-gb200ts60npbf.pdf pdf_icon

VS-GB200NH120N

VS-GB200TS60NPbF www.vishay.com Vishay Semiconductors INT-A-PAK Half Bridge (Ultrafast Speed IGBT), 209 A FEATURES Generation 5 Non Punch Through (NPT) technology Ultrafast optimized for hard switching speed Low VCE(on) 10 s short circuit capability Square RBSOA Positive VCE(on) temperature coefficient HEXFRED antiparallel diode with ultras... See More ⇒

Specs: VS-GB100TP120N , VS-GB100TP120U , VS-GB100TS60NPBF , VS-GB150LH120N , VS-GB150TH120N , VS-GB150TH120U , VS-GB150TS60NPBF , VS-GB200LH120N , IRG7R313U , VS-GB200TH120N , VS-GB200TH120U , VS-GB200TS60NPBF , VS-GA100TS60SFPBF , VS-GA200HS60S1PBF , VS-GA200SA60UP , VS-GA200TH60S , VS-GA250SA60S .

History: VS-GP100TS60SFPBF

Keywords - VS-GB200NH120N transistor spec

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