VS-GB200NH120N - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.
Наименование: VS-GB200NH120N
Тип транзистора: IGBT
Тип управляющего канала: N
Pcⓘ - Максимальная рассеиваемая мощность: 1562 W
|Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 1200 V
|Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V
|Ic|ⓘ - Максимальный постоянный ток коллектора: 200 A @25℃
|VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 1.8 V @25℃
Tjⓘ - Максимальная температура перехода: 150 ℃
trⓘ - Время нарастания типовое: 60 nS
Coesⓘ - Выходная емкость, типовая: 1640 pF
Тип корпуса: MODULE
Аналог (замена) для VS-GB200NH120N
VS-GB200NH120N Datasheet (PDF)
vs-gb200nh120n.pdf
VS-GB200NH120Nwww.vishay.comVishay SemiconductorsMolding Type Module IGBT,Chopper in 1 Package, 1200 V and 200 AFEATURES High short circuit capability, self limiting to 6 x IC 10 s short circuit capability VCE(on) with positive temperature coefficient Maximum junction temperature 150 C Low inductance case Fast and soft reverse recovery antiparallel FW
vs-gb200lh120n.pdf
VS-GB200LH120Nwww.vishay.comVishay SemiconductorsMolding Type Module IGBT,Chopper in 1 Package, 1200 V and 200 AFEATURES High short circuit capability, self limiting to 6 x IC 10 s short circuit capability VCE(on) with positive temperature coefficient Maximum junction temperature 150 C Low inductance case Fast and soft reverse recovery antiparallel FW
vs-gb200th120n.pdf
VS-GB200TH120Nwww.vishay.comVishay SemiconductorsMolding Type Module IGBT,2-in-1 Package, 1200 V and 200 AFEATURES Low VCE(on) SPT+ IGBT technology 10 s short circuit capability VCE(on) with positive temperature coefficient Maximum junction temperature 150 C Low inductance case Fast and soft reverse recovery antiparallel FWDDouble INT-A-PAK Iso
vs-gb200ts60npbf.pdf
VS-GB200TS60NPbFwww.vishay.comVishay SemiconductorsINT-A-PAK Half Bridge (Ultrafast Speed IGBT), 209 AFEATURES Generation 5 Non Punch Through (NPT) technology Ultrafast: optimized for hard switching speed Low VCE(on) 10 s short circuit capability Square RBSOA Positive VCE(on) temperature coefficient HEXFRED antiparallel diode with ultras
vs-gb200th120u.pdf
VS-GB200TH120Uwww.vishay.comVishay SemiconductorsMolding Type Module IGBT,2-in-1 Package, 1200 V and 200 AFEATURES 10 s short circuit capability VCE(on) with positive temperature coefficient Maximum junction temperature 150 C Low switching losses Rugged with ultrafast performance Low inductance caseDouble INT-A-PAK Fast and soft reverse recovery
Другие IGBT... VS-GB100TP120N , VS-GB100TP120U , VS-GB100TS60NPBF , VS-GB150LH120N , VS-GB150TH120N , VS-GB150TH120U , VS-GB150TS60NPBF , VS-GB200LH120N , FGPF4633 , VS-GB200TH120N , VS-GB200TH120U , VS-GB200TS60NPBF , VS-GA100TS60SFPBF , VS-GA200HS60S1PBF , VS-GA200SA60UP , VS-GA200TH60S , VS-GA250SA60S .
Список транзисторов
Обновления
IGBT: AOTS40B65H1 | AOTF8B65MQ1 | AOTF5B65M2 | AOTF5B65M1 | AOTF20B65M2 | AOTF20B65M1 | AOTF20B65LN2 | AOTF15B65MQ1 | AOTF15B65M3 | AOTF15B65M2 | AOTF15B60D2