HGTP20N60C3 Datasheet and Replacement
Type Designator: HGTP20N60C3
Type: IGBT
Marking Code: G20N60C3
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 164 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 45 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.4 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.3 V
Tjⓘ - Maximum Junction Temperature: 150 ℃
trⓘ - Rise Time, typ: 24 nS
Qgⓘ - Total Gate Charge, typ: 91 nC
Package: TO220AB
- IGBT Cross-Reference
HGTP20N60C3 Datasheet (PDF)
hgt1s20n60c3s hgtp20n60c3 hgtg20n60c3.pdf

HGTG20N60C3, HGTP20N60C3,HGT1S20N60C3SData Sheet December 200145A, 600V, UFS Series N-Channel IGBT FeaturesThis family of MOS gated high voltage switching devices 45A, 600V, TC = 25oCcombining the best features of MOSFETs and bipolar 600V Switching SOA Capabilitytransistors. These devices have the high input impedance of Typical Fall Time. . . . . . . . . . . . . .
hgtg20n60c3 hgtp20n60c3 hgt1s20n60c3s.pdf

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
Datasheet: HGTP14N40F3VL , HGTP1N120BN , HGTP1N120BND , HGTP1N120CN , HGTP1N120CND , HGTP20N35G3VL , HGTP20N60A4 , HGTP20N60B3 , YGW60N65F1A1 , HGTP20N60C3R , HGTP2N120BN , HGTP2N120BND , HGTP2N120CN , HGTP2N120CND , HGTP3N60A4 , HGTP3N60A4D , HGTP3N60B3 .
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