HGTP20N60C3 IGBT. Datasheet pdf. Equivalent
Type Designator: HGTP20N60C3
Type of IGBT Channel: N-Channel
Maximum Collector-Emitter Voltage |Vce|, V: 600
Maximum Collector Current |Ic|, A: 45
Maximum Junction Temperature (Tj), °C: 150
HGTP20N60C3 Transistor Equivalent Substitute - IGBT Cross-Reference Search
HGTP20N60C3 Datasheet (PDF)
0.1. hgt1s20n60c3s hgtp20n60c3 hgtg20n60c3.pdf Size:140K _fairchild_semi
HGTG20N60C3, HGTP20N60C3, HGT1S20N60C3S Data Sheet December 2001 45A, 600V, UFS Series N-Channel IGBT Features This family of MOS gated high voltage switching devices • 45A, 600V, TC = 25oC combining the best features of MOSFETs and bipolar • 600V Switching SOA Capability transistors. These devices have the high input impedance of • Typical Fall Time. . . . . . . . . . . . . .
0.2. hgtp20n60c3r.pdf Size:112K _harris_semi
HGTG20N60C3R, HGTP20N60C3R, S E M I C O N D U C T O R HGT1S20N60C3R, HGT1S20N60C3RS 40A, 600V, Rugged UFS Series N-Channel IGBTs January 1997 Features Description • 40A, 600V TJ = 25oC This family of IGBTs was designed for optimum performance in the demanding world of motor control operation as well as • 600V Switching SOA Capability other high voltage switching applications. These
5.1. hgtg20n60a4 hgtp20n60a4.pdf Size:136K _fairchild_semi
HGTG20N60A4, HGTP20N60A4 Data Sheet December 2001 600V, SMPS Series N-Channel IGBTs Features The HGTG20N60A4 and HGTP20N60A4 are MOS gated • >100kHz Operation at 390V, 20A high voltage switching devices combining the best features • 200kHz Operation at 390V, 12A of MOSFETs and bipolar transistors. These devices have the • 600V Switching SOA Capability high input impedance of a
Datasheet: HGTP14N40F3VL , HGTP1N120BN , HGTP1N120BND , HGTP1N120CN , HGTP1N120CND , HGTP20N35G3VL , HGTP20N60A4 , HGTP20N60B3 , G30N60C3 , HGTP20N60C3R , HGTP2N120BN , HGTP2N120BND , HGTP2N120CN , HGTP2N120CND , HGTP3N60A4 , HGTP3N60A4D , HGTP3N60B3 .