HGTP20N60C3 - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.

Наименование: HGTP20N60C3

Тип управляющего канала: N-Channel

Предельно-допустимое напряжение коллектор-эмиттер (Uce): 600V

Максимальный постоянный ток коллектора (Ic): 45A

Максимальная температура перехода (Tj): 150

Корпус: TO220AB

Аналог (замена) для HGTP20N60C3

HGTP20N60C3 Datasheet (PDF)

1.1. hgt1s20n60c3s hgtp20n60c3 hgtg20n60c3.pdf Size:140K _fairchild_semi

HGTG20N60C3, HGTP20N60C3, HGT1S20N60C3S Data Sheet December 2001 45A, 600V, UFS Series N-Channel IGBT Features This family of MOS gated high voltage switching devices � 45A, 600V, TC = 25oC combining the best features of MOSFETs and bipolar � 600V Switching SOA Capability transistors. These devices have the high input impedance of � Typical Fall Time. . . . . . . . . . . . . . . . 108n

1.2. hgtg20n60a4 hgtp20n60a4.pdf Size:136K _fairchild_semi

HGTG20N60A4, HGTP20N60A4 Data Sheet December 2001 600V, SMPS Series N-Channel IGBTs Features The HGTG20N60A4 and HGTP20N60A4 are MOS gated � >100kHz Operation at 390V, 20A high voltage switching devices combining the best features � 200kHz Operation at 390V, 12A of MOSFETs and bipolar transistors. These devices have the � 600V Switching SOA Capability high input impedance of a MOSFET a

 1.3. hgtp20n60c3r.pdf Size:112K _igbt_a

HGTG20N60C3R, HGTP20N60C3R, S E M I C O N D U C T O R HGT1S20N60C3R, HGT1S20N60C3RS 40A, 600V, Rugged UFS Series N-Channel IGBTs January 1997 Features Description • 40A, 600V TJ = 25oC This family of IGBTs was designed for optimum performance in the demanding world of motor control operation as well as • 600V Switching SOA Capability other high voltage switching applications. These

Другие IGBT... HGTP14N40F3VL , HGTP1N120BN , HGTP1N120BND , HGTP1N120CN , HGTP1N120CND , HGTP20N35G3VL , HGTP20N60A4 , HGTP20N60B3 , G30N60C3 , HGTP20N60C3R , HGTP2N120BN , HGTP2N120BND , HGTP2N120CN , HGTP2N120CND , HGTP3N60A4 , HGTP3N60A4D , HGTP3N60B3 .