HGTP20N60C3R Datasheet and Replacement
Type Designator: HGTP20N60C3R
Type: IGBT
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 164 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 40 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.8 V @25℃
Tjⓘ - Maximum Junction Temperature: 150 ℃
trⓘ - Rise Time, typ: 40 nS
Package: TO220AB
- IGBT Cross-Reference
HGTP20N60C3R Datasheet (PDF)
hgtp20n60c3r hgtg20n60c3r hgt1s20n60c3r hgt1s20n60c3rs.pdf

HGTG20N60C3R, HGTP20N60C3R,S E M I C O N D U C T O RHGT1S20N60C3R, HGT1S20N60C3RS40A, 600V, Rugged UFS Series N-Channel IGBTsJanuary 1997Features Description 40A, 600V TJ = 25oC This family of IGBTs was designed for optimum performancein the demanding world of motor control operation as well as 600V Switching SOA Capabilityother high voltage switching applications. These
hgtp20n60c3r.pdf

HGTG20N60C3R, HGTP20N60C3R,S E M I C O N D U C T O RHGT1S20N60C3R, HGT1S20N60C3RS40A, 600V, Rugged UFS Series N-Channel IGBTsJanuary 1997Features Description 40A, 600V TJ = 25oC This family of IGBTs was designed for optimum performancein the demanding world of motor control operation as well as 600V Switching SOA Capabilityother high voltage switching applications. These
Datasheet: HGTP1N120BN , HGTP1N120BND , HGTP1N120CN , HGTP1N120CND , HGTP20N35G3VL , HGTP20N60A4 , HGTP20N60B3 , HGTP20N60C3 , CRG60T60AN3H , HGTP2N120BN , HGTP2N120BND , HGTP2N120CN , HGTP2N120CND , HGTP3N60A4 , HGTP3N60A4D , HGTP3N60B3 , HGTP3N60B3D .
History: 1MBI300S-120 | IXGH20N60BD1 | HGTG20N60C3DR
Keywords - HGTP20N60C3R transistor datasheet
HGTP20N60C3R cross reference
HGTP20N60C3R equivalent finder
HGTP20N60C3R lookup
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HGTP20N60C3R replacement
History: 1MBI300S-120 | IXGH20N60BD1 | HGTG20N60C3DR



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