Справочник IGBT. HGTP20N60C3R

 

HGTP20N60C3R - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.


   Наименование: HGTP20N60C3R
   Тип транзистора: IGBT
   Маркировка: 20N60C3R
   Тип управляющего канала: N
   Pcⓘ - Максимальная рассеиваемая мощность: 164 W
   |Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 600 V
   |Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V
   |Ic|ⓘ - Максимальный постоянный ток коллектора: 40 A @25℃
   |VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 1.8 V @25℃
   |VGEth|ⓘ - Максимальное пороговое напряжение затвор-эмиттер: 7.5 V
   Tjⓘ - Максимальная температура перехода: 150 ℃
   trⓘ - Время нарастания типовое: 40 nS
   Qgⓘ - Общий заряд затвора, typ: 87 nC
   Тип корпуса: TO220AB

 Аналог (замена) для HGTP20N60C3R

 

 

HGTP20N60C3R Datasheet (PDF)

 ..2. Size:112K  1
hgtp20n60c3r hgtg20n60c3r hgt1s20n60c3r hgt1s20n60c3rs.pdf

HGTP20N60C3R
HGTP20N60C3R

HGTG20N60C3R, HGTP20N60C3R,S E M I C O N D U C T O RHGT1S20N60C3R, HGT1S20N60C3RS40A, 600V, Rugged UFS Series N-Channel IGBTsJanuary 1997Features Description 40A, 600V TJ = 25oC This family of IGBTs was designed for optimum performancein the demanding world of motor control operation as well as 600V Switching SOA Capabilityother high voltage switching applications. These

 ..3. Size:112K  harris semi
hgtp20n60c3r.pdf

HGTP20N60C3R
HGTP20N60C3R

HGTG20N60C3R, HGTP20N60C3R,S E M I C O N D U C T O RHGT1S20N60C3R, HGT1S20N60C3RS40A, 600V, Rugged UFS Series N-Channel IGBTsJanuary 1997Features Description 40A, 600V TJ = 25oC This family of IGBTs was designed for optimum performancein the demanding world of motor control operation as well as 600V Switching SOA Capabilityother high voltage switching applications. These

 3.2. Size:140K  fairchild semi
hgt1s20n60c3s hgtp20n60c3 hgtg20n60c3.pdf

HGTP20N60C3R
HGTP20N60C3R

HGTG20N60C3, HGTP20N60C3,HGT1S20N60C3SData Sheet December 200145A, 600V, UFS Series N-Channel IGBT FeaturesThis family of MOS gated high voltage switching devices 45A, 600V, TC = 25oCcombining the best features of MOSFETs and bipolar 600V Switching SOA Capabilitytransistors. These devices have the high input impedance of Typical Fall Time. . . . . . . . . . . . . .

 3.3. Size:260K  onsemi
hgtg20n60c3 hgtp20n60c3 hgt1s20n60c3s.pdf

HGTP20N60C3R
HGTP20N60C3R

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

Другие IGBT... HGTP1N120BN , HGTP1N120BND , HGTP1N120CN , HGTP1N120CND , HGTP20N35G3VL , HGTP20N60A4 , HGTP20N60B3 , HGTP20N60C3 , IHW20N135R5 , HGTP2N120BN , HGTP2N120BND , HGTP2N120CN , HGTP2N120CND , HGTP3N60A4 , HGTP3N60A4D , HGTP3N60B3 , HGTP3N60B3D .

 

 
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