VS-GP400TD60S Spec and Replacement, IGBT Equivalent Finder, Cross Reference

VS-GP400TD60S Specs and Replacement

Type Designator: VS-GP400TD60S

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 875 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 525 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.3 V @25℃

tr ⓘ - Rise Time, typ: 254 nS

Package: MODULE

VS-GP400TD60S Substitution

- IGBT ⓘ Cross-Reference Search

VS-GP400TD60S datasheet

..1. Size:154K vishay
vs-gp400td60s.pdf pdf_icon

... See More ⇒

9.1. Size:275K vishay
vs-gp250sa60s.pdf pdf_icon

VS-GP250SA60S www.vishay.com Vishay Semiconductors Insulated Gate Bipolar Transistor Trench PT IGBT, 600 V, 250 A Proprietary Vishay IGBT Silicon L Series FEATURES Standard speed Trench PT IGBT Fully isolated package Very low internal inductance ( 5 nH typical) Industry standard outline UL approved file E78996 Material categorization for definitio... See More ⇒

9.2. Size:199K vishay
vs-gp100ts60sfpbf.pdf pdf_icon

VS-GP100TS60SFPbF www.vishay.com Vishay Semiconductors Half Bridge IGBT INT-A-PAK, (Trench PT IGBT), 100 A Proprietary Vishay IGBT Silicon L Series FEATURES Trench PT IGBT technology FRED Pt anti-parallel diodes with fast recovery Very low conduction losses Al2O3 DBC UL pending Designed for industrial level Material categorization for defin... See More ⇒

9.3. Size:158K vishay
vs-gp300td60s.pdf pdf_icon