Справочник IGBT. VS-GP400TD60S

 

VS-GP400TD60S - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.


   Наименование: VS-GP400TD60S
   Тип транзистора: IGBT
   Тип управляющего канала: N
   Pcⓘ - Максимальная рассеиваемая мощность: 875 W
   |Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 600 V
   |Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V
   |Ic|ⓘ - Максимальный постоянный ток коллектора: 525 A @25℃
   |VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 1.3 V @25℃
   Tjⓘ - Максимальная температура перехода: 150 ℃
   trⓘ - Время нарастания типовое: 254 nS
   Тип корпуса: MODULE

 Аналог (замена) для VS-GP400TD60S

 

 

VS-GP400TD60S Datasheet (PDF)

 ..1. Size:154K  vishay
vs-gp400td60s.pdf

VS-GP400TD60S
VS-GP400TD60S

VS-GP400TD60Swww.vishay.comVishay SemiconductorsDual INT-A-PAK Low Profile Half Bridge (Trench PT IGBT), 400 AProprietary Vishay IGBT Silicon L SeriesFEATURES Trench PT IGBT technology Low VCE(on) Square RBSOA HEXFRED antiparallel diode with ultrasoft reverse recovery characteristics Industry standard package Al2O3 DBC UL pending

 9.1. Size:275K  vishay
vs-gp250sa60s.pdf

VS-GP400TD60S
VS-GP400TD60S

VS-GP250SA60Swww.vishay.comVishay SemiconductorsInsulated Gate Bipolar Transistor Trench PT IGBT, 600 V, 250 AProprietary Vishay IGBT Silicon L SeriesFEATURES Standard speed Trench PT IGBT Fully isolated package Very low internal inductance ( 5 nH typical) Industry standard outline UL approved file E78996 Material categorization: for definitio

 9.2. Size:199K  vishay
vs-gp100ts60sfpbf.pdf

VS-GP400TD60S
VS-GP400TD60S

VS-GP100TS60SFPbFwww.vishay.comVishay SemiconductorsHalf Bridge IGBT INT-A-PAK, (Trench PT IGBT), 100 AProprietary Vishay IGBT Silicon L SeriesFEATURES Trench PT IGBT technology FRED Pt anti-parallel diodes with fast recovery Very low conduction losses Al2O3 DBC UL pending Designed for industrial level Material categorization: for defin

 9.3. Size:158K  vishay
vs-gp300td60s.pdf

VS-GP400TD60S
VS-GP400TD60S

VS-GP300TD60Swww.vishay.comVishay SemiconductorsDual INT-A-PAK Low Profile Half Bridge (Trench PT IGBT), 300 AProprietary Vishay IGBT Silicon L SeriesFEATURES Trench PT IGBT technology Low VCE(on) Square RBSOA HEXFRED antiparallel diode with ultrasoft reverse recovery characteristics Industry standard package Al2O3 DBC UL pending

Другие IGBT... VS-GB75YF120N , VS-GB75YF120UT , VS-GB90DA120U , VS-GB90DA60U , VS-GB90SA120U , VS-GP100TS60SFPBF , VS-GP250SA60S , VS-GP300TD60S , IRG4PC50U , VS-ENQ030L120S , VS-ETF075Y60U , VS-ETL015Y120H , F12-25R12KT4G , F12-35R12KT4G , F3L100R07W2E3_B11 , F3L100R12W2H3_B11 , F3L150R07W2E3_B11 .

 

 
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