VS-GP400TD60S - параметры транзистора, его аналоги, Даташиты

VS-GP400TD60S Datasheet (PDF)

..1. Size:154K vishay
vs-gp400td60s.pdf pdf_icon

VS-GP400TD60Swww.vishay.comVishay SemiconductorsDual INT-A-PAK Low Profile Half Bridge (Trench PT IGBT), 400 AProprietary Vishay IGBT Silicon L SeriesFEATURES Trench PT IGBT technology Low VCE(on) Square RBSOA HEXFRED antiparallel diode with ultrasoft reverse recovery characteristics Industry standard package Al2O3 DBC UL pending

9.1. Size:275K vishay
vs-gp250sa60s.pdf pdf_icon

VS-GP250SA60Swww.vishay.comVishay SemiconductorsInsulated Gate Bipolar Transistor Trench PT IGBT, 600 V, 250 AProprietary Vishay IGBT Silicon L SeriesFEATURES Standard speed Trench PT IGBT Fully isolated package Very low internal inductance ( 5 nH typical) Industry standard outline UL approved file E78996 Material categorization: for definitio

9.2. Size:199K vishay
vs-gp100ts60sfpbf.pdf pdf_icon

VS-GP100TS60SFPbFwww.vishay.comVishay SemiconductorsHalf Bridge IGBT INT-A-PAK, (Trench PT IGBT), 100 AProprietary Vishay IGBT Silicon L SeriesFEATURES Trench PT IGBT technology FRED Pt anti-parallel diodes with fast recovery Very low conduction losses Al2O3 DBC UL pending Designed for industrial level Material categorization: for defin

9.3. Size:158K vishay
vs-gp300td60s.pdf pdf_icon

VS-GP300TD60Swww.vishay.comVishay SemiconductorsDual INT-A-PAK Low Profile Half Bridge (Trench PT IGBT), 300 AProprietary Vishay IGBT Silicon L SeriesFEATURES Trench PT IGBT technology Low VCE(on) Square RBSOA HEXFRED antiparallel diode with ultrasoft reverse recovery characteristics Industry standard package Al2O3 DBC UL pending

Другие IGBT... VS-GB75YF120N , VS-GB75YF120UT , VS-GB90DA120U , VS-GB90DA60U , VS-GB90SA120U , VS-GP100TS60SFPBF , VS-GP250SA60S , VS-GP300TD60S , GT30J122 , VS-ENQ030L120S , VS-ETF075Y60U , VS-ETL015Y120H , F12-25R12KT4G , F12-35R12KT4G , F3L100R07W2E3_B11 , F3L100R12W2H3_B11 , F3L150R07W2E3_B11 .