All IGBT. F3L15R12W2H3_B27 Datasheet

 

F3L15R12W2H3_B27 Datasheet and Replacement


   Type Designator: F3L15R12W2H3_B27
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 145 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 15 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.05 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.5 V
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 25 nS
   Package: MODULE
      - IGBT Cross-Reference

 

F3L15R12W2H3_B27 Datasheet (PDF)

 0.1. Size:1630K  infineon
f3l15r12w2h3 b27.pdf pdf_icon

F3L15R12W2H3_B27

/ Technical InformationIGBT-F3L15R12W2H3_B27IGBT-modules / Preliminary DataV = 1200VCESI = 15A / I = 30AC nom CRM Typical Applications 3-Level-Applications Solar Applications Electrical Features Low inductive design Lo

 2.1. Size:1463K  infineon
f3l15r12w2h3-b27.pdf pdf_icon

F3L15R12W2H3_B27

Technische Information / Technical InformationIGBT-ModuleF3L15R12W2H3_B27IGBT-modulesVorlufige Daten / Preliminary DataV = 1200VCESI = 15A / I = 30AC nom CRMTypische Anwendungen Typical Applications 3-Level-Applikationen 3-Level-Applications Solar Anwendungen Solar ApplicationsElektrische Eigenschaften Electrical Features Niederinduktives Design

 9.1. Size:777K  infineon
f3l150r07w2e3 b11.pdf pdf_icon

F3L15R12W2H3_B27

Technische Information / Technical InformationIGBT-ModuleF3L150R07W2E3_B11IGBT-modulesEasyPACK Modul mit Trench/Feldstopp IGBT3 und Emitter Controlled 3 Diode und PressFIT / NTCEasyPACK module with Trench/Fieldstop IGBT3 and Emitter Controlled 3 diode and PressFIT / NTCVorlufige Daten / Preliminary DataV = 650VCESI = 150A / I = 300AC nom CRMTypische Anwendungen Typic

 9.2. Size:1158K  infineon
f3l150r12w2h3 b11.pdf pdf_icon

F3L15R12W2H3_B27

/ Technical InformationIGBT-F3L150R12W2H3_B11IGBT-ModuleEasyPACK 2 and PressFIT / NTCEasyPACK module with active "Neutral Point Clamp 2" topology and PressFIT / NTC V = 1200VCESI = 75A / I = 150AC nom CRM

Datasheet: AP05G120SW-HF , TSG10N120CN , AP05G120NSW-HF , AP20GT60SW , AP20GT60W , CI15T60 , MMIX4B12N300 , NGD8205A , IHW20N135R5 , IXYP8N90C3D1 , APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W .

Keywords - F3L15R12W2H3_B27 transistor datasheet

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 F3L15R12W2H3_B27 substitution
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