F3L15R12W2H3_B27 Specs and Replacement
Type Designator: F3L15R12W2H3_B27
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 145 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 15 A @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.05 V @25℃
Package: MODULE F3L15R12W2H3_B27 Substitution - IGBT ⓘ Cross-Reference Search
F3L15R12W2H3_B27 datasheet
f3l15r12w2h3 b27.pdf
/ Technical Information IGBT- F3L15R12W2H3_B27 IGBT-modules / Preliminary Data V = 1200V CES I = 15A / I = 30A C nom CRM Typical Applications 3-Level-Applications Solar Applications Electrical Features Low inductive design Lo... See More ⇒
f3l15r12w2h3-b27.pdf
Technische Information / Technical Information IGBT-Module F3L15R12W2H3_B27 IGBT-modules Vorl ufige Daten / Preliminary Data V = 1200V CES I = 15A / I = 30A C nom CRM Typische Anwendungen Typical Applications 3-Level-Applikationen 3-Level-Applications Solar Anwendungen Solar Applications Elektrische Eigenschaften Electrical Features Niederinduktives Design ... See More ⇒
f3l150r07w2e3 b11.pdf
Technische Information / Technical Information IGBT-Module F3L150R07W2E3_B11 IGBT-modules EasyPACK Modul mit Trench/Feldstopp IGBT3 und Emitter Controlled 3 Diode und PressFIT / NTC EasyPACK module with Trench/Fieldstop IGBT3 and Emitter Controlled 3 diode and PressFIT / NTC Vorl ufige Daten / Preliminary Data V = 650V CES I = 150A / I = 300A C nom CRM Typische Anwendungen Typic... See More ⇒
f3l150r12w2h3 b11.pdf
/ Technical Information IGBT- F3L150R12W2H3_B11 IGBT-Module EasyPACK 2 and PressFIT / NTC EasyPACK module with active "Neutral Point Clamp 2" topology and PressFIT / NTC V = 1200V CES I = 75A / I = 150A C nom CRM ... See More ⇒
Specs: VS-ETF075Y60U , VS-ETL015Y120H , F12-25R12KT4G , F12-35R12KT4G , F3L100R07W2E3_B11 , F3L100R12W2H3_B11 , F3L150R07W2E3_B11 , F3L150R12W2H3_B11 , IKW40N65WR5 , F3L200R07PE4 , F3L200R12W2H3_B11 , F3L300R12ME4_B22 , F3L300R12ME4_B23 , F3L300R12MT4_B22 , F3L300R12MT4_B23 , F3L300R12PT4_B26 , F3L400R07ME4_B22 .
History: IXSX40N60BD1
Keywords - F3L15R12W2H3_B27 transistor spec
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F3L15R12W2H3_B27 substitution
F3L15R12W2H3_B27 replacement
History: IXSX40N60BD1
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IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE
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