F3L15R12W2H3_B27 Datasheet and Replacement
Type Designator: F3L15R12W2H3_B27
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 145 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 15 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.05 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.5 V
Tjⓘ - Maximum Junction Temperature: 150 ℃
trⓘ - Rise Time, typ: 25 nS
Package: MODULE
F3L15R12W2H3_B27 Datasheet (PDF)
f3l15r12w2h3 b27.pdf

/ Technical InformationIGBT-F3L15R12W2H3_B27IGBT-modules / Preliminary DataV = 1200VCESI = 15A / I = 30AC nom CRM Typical Applications 3-Level-Applications Solar Applications Electrical Features Low inductive design Lo
f3l15r12w2h3-b27.pdf

Technische Information / Technical InformationIGBT-ModuleF3L15R12W2H3_B27IGBT-modulesVorlufige Daten / Preliminary DataV = 1200VCESI = 15A / I = 30AC nom CRMTypische Anwendungen Typical Applications 3-Level-Applikationen 3-Level-Applications Solar Anwendungen Solar ApplicationsElektrische Eigenschaften Electrical Features Niederinduktives Design
f3l150r07w2e3 b11.pdf

Technische Information / Technical InformationIGBT-ModuleF3L150R07W2E3_B11IGBT-modulesEasyPACK Modul mit Trench/Feldstopp IGBT3 und Emitter Controlled 3 Diode und PressFIT / NTCEasyPACK module with Trench/Fieldstop IGBT3 and Emitter Controlled 3 diode and PressFIT / NTCVorlufige Daten / Preliminary DataV = 650VCESI = 150A / I = 300AC nom CRMTypische Anwendungen Typic
f3l150r12w2h3 b11.pdf

/ Technical InformationIGBT-F3L150R12W2H3_B11IGBT-ModuleEasyPACK 2 and PressFIT / NTCEasyPACK module with active "Neutral Point Clamp 2" topology and PressFIT / NTC V = 1200VCESI = 75A / I = 150AC nom CRM
Datasheet: AP05G120SW-HF , TSG10N120CN , AP05G120NSW-HF , AP20GT60SW , AP20GT60W , CI15T60 , MMIX4B12N300 , NGD8205A , IHW20N135R5 , IXYP8N90C3D1 , APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W .
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