F3L200R12W2H3_B11 Specs and Replacement
Type Designator: F3L200R12W2H3_B11
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 600 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 200 A @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.55 V @25℃
Package: MODULE F3L200R12W2H3_B11 Substitution - IGBTⓘ Cross-Reference Search
F3L200R12W2H3_B11 datasheet
Specs: F12-25R12KT4G, F12-35R12KT4G, F3L100R07W2E3_B11, F3L100R12W2H3_B11, F3L150R07W2E3_B11, F3L150R12W2H3_B11, F3L15R12W2H3_B27, F3L200R07PE4, IXRH40N120, F3L300R12ME4_B22, F3L300R12ME4_B23, F3L300R12MT4_B22, F3L300R12MT4_B23, F3L300R12PT4_B26, F3L400R07ME4_B22, F3L400R07ME4_B23, F3L400R07PE4_B26
Keywords - F3L200R12W2H3_B11 transistor spec
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History: MGW12N120 | JT05N065SAD | STGB40H65FB
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IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE
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