All IGBT. F3L200R12W2H3_B11 Datasheet

 

F3L200R12W2H3_B11 Datasheet and Replacement


   Type Designator: F3L200R12W2H3_B11
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 600 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 200 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.55 V @25℃
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 25 nS
   Package: MODULE
      - IGBT Cross-Reference

 

F3L200R12W2H3_B11 Datasheet (PDF)

 0.1. Size:1161K  infineon
 f3l200r12w2h3 b11.pdf pdf_icon

F3L200R12W2H3_B11

/ Technical InformationIGBT-F3L200R12W2H3_B11IGBT-ModuleEasyPACK 2 and PressFIT / NTCEasyPACK module with active "Neutral Point Clamp 2" topology and PressFIT / NTC V = 1200VCESI = 100A / I = 200AC nom CRM

 7.1. Size:1053K  infineon
 f3l200r07pe4.pdf pdf_icon

F3L200R12W2H3_B11

/ Technical InformationIGBT-F3L200R07PE4IGBT-modulesEconoPACK4 / IGBT4 and 4 diode andNTCEconoPACK4 module with Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode and NTC / Preliminary Data

Datasheet: F12-25R12KT4G , F12-35R12KT4G , F3L100R07W2E3_B11 , F3L100R12W2H3_B11 , F3L150R07W2E3_B11 , F3L150R12W2H3_B11 , F3L15R12W2H3_B27 , F3L200R07PE4 , NCE80TD65BT , F3L300R12ME4_B22 , F3L300R12ME4_B23 , F3L300R12MT4_B22 , F3L300R12MT4_B23 , F3L300R12PT4_B26 , F3L400R07ME4_B22 , F3L400R07ME4_B23 , F3L400R07PE4_B26 .

History: IXGT20N120B | APT40GP60BG

Keywords - F3L200R12W2H3_B11 transistor datasheet

 F3L200R12W2H3_B11 cross reference
 F3L200R12W2H3_B11 equivalent finder
 F3L200R12W2H3_B11 lookup
 F3L200R12W2H3_B11 substitution
 F3L200R12W2H3_B11 replacement

 

 
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