F4-100R12KS4 Specs and Replacement
Type Designator: F4-100R12KS4
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 660 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 100 A @25℃
Tj ⓘ - Maximum Junction Temperature: 125 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 3.2 V @25℃
Package: MODULE F4-100R12KS4 Substitution - IGBT ⓘ Cross-Reference Search
F4-100R12KS4 datasheet
f4-100r12ks4.pdf
Technische Information / Technical Information IGBT-Module F4-100R12KS4 IGBT-modules Vorl ufige Daten IGBT,Wechselrichter / IGBT,Inverter Preliminary Data H chstzul ssige Werte / Maximum Rated Values Kollektor-Emitter-Sperrspannung T = 25 C V 1200 V vj CES Collector-emitter voltage Kollektor-Dauergleichstrom T = 65 C, T = 150 C I 100 A C vj max C nom Continuous DC collector c... See More ⇒
f4-100r06kl4.pdf
Technische Information / technical information IGBT-Module F4-100R06KL4 IGBT-modules Vorl ufige Daten preliminary data IGBT-Wechselrichter / IGBT-inverter H chstzul ssige Werte / maximum rated values Kollektor-Emitter-Sperrspannung T = 25 C V 600 V collector-emitter voltage Kollektor-Dauergleichstrom T = 65 C I 100 A DC-collector current T = 25 C I 130 A Periodischer Kollekto... See More ⇒
Specs: F3L400R07ME4_B22, F3L400R07ME4_B23, F3L400R07PE4_B26, F3L400R12PT4_B26, F3L75R07W2E3_B11, F3L75R12W1H3_B27, F3L80R12W1H3_B11, F4-100R06KL4, CRG40T65AK5HD, F4-150R12KS4, F4-200R06KL4, F4-30R06W1E3, F4-50R06W1E3, F4-50R07W2H3_B51, F4-50R12KS4, F4-50R12KS4_B11, F4-50R12MS4
Keywords - F4-100R12KS4 transistor spec
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