F4-100R12KS4 IGBT. Datasheet pdf. Equivalent
Type Designator: F4-100R12KS4
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 660 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 100 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 3.2 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.5 V
Tjⓘ - Maximum Junction Temperature: 125 ℃
trⓘ - Rise Time, typ: 50 nS
Package: MODULE
F4-100R12KS4 Transistor Equivalent Substitute - IGBT Cross-Reference Search
F4-100R12KS4 Datasheet (PDF)
f4-100r12ks4.pdf
Technische Information / Technical InformationIGBT-ModuleF4-100R12KS4IGBT-modulesVorlufige DatenIGBT,Wechselrichter / IGBT,Inverter Preliminary DataHchstzulssige Werte / Maximum Rated ValuesKollektor-Emitter-SperrspannungT = 25C V 1200 Vvj CESCollector-emitter voltageKollektor-Dauergleichstrom T = 65C, T = 150C I 100 AC vj max C nomContinuous DC collector c
f4-100r06kl4.pdf
Technische Information / technical informationIGBT-ModuleF4-100R06KL4IGBT-modulesVorlufige Datenpreliminary dataIGBT-Wechselrichter / IGBT-inverterHchstzulssige Werte / maximum rated valuesKollektor-Emitter-SperrspannungT = 25C V 600 Vcollector-emitter voltageKollektor-Dauergleichstrom T = 65C I 100 ADC-collector current T = 25C I 130 APeriodischer Kollekto
Datasheet: F3L400R07ME4_B22 , F3L400R07ME4_B23 , F3L400R07PE4_B26 , F3L400R12PT4_B26 , F3L75R07W2E3_B11 , F3L75R12W1H3_B27 , F3L80R12W1H3_B11 , F4-100R06KL4 , IRGP4063 , F4-150R12KS4 , F4-200R06KL4 , F4-30R06W1E3 , F4-50R06W1E3 , F4-50R07W2H3_B51 , F4-50R12KS4 , F4-50R12KS4_B11 , F4-50R12MS4 .
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