All IGBT. F4-100R12KS4 Datasheet

 

F4-100R12KS4 Datasheet and Replacement


   Type Designator: F4-100R12KS4
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 660 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 100 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 3.2 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.5 V
   Tjⓘ - Maximum Junction Temperature: 125 ℃
   trⓘ - Rise Time, typ: 50 nS
   Package: MODULE
      - IGBT Cross-Reference

 

F4-100R12KS4 Datasheet (PDF)

 ..1. Size:480K  infineon
 f4-100r12ks4.pdf pdf_icon

F4-100R12KS4

Technische Information / Technical InformationIGBT-ModuleF4-100R12KS4IGBT-modulesVorlufige DatenIGBT,Wechselrichter / IGBT,Inverter Preliminary DataHchstzulssige Werte / Maximum Rated ValuesKollektor-Emitter-SperrspannungT = 25C V 1200 Vvj CESCollector-emitter voltageKollektor-Dauergleichstrom T = 65C, T = 150C I 100 AC vj max C nomContinuous DC collector c

 7.1. Size:266K  eupec
 f4-100r06kl4.pdf pdf_icon

F4-100R12KS4

Technische Information / technical informationIGBT-ModuleF4-100R06KL4IGBT-modulesVorlufige Datenpreliminary dataIGBT-Wechselrichter / IGBT-inverterHchstzulssige Werte / maximum rated valuesKollektor-Emitter-SperrspannungT = 25C V 600 Vcollector-emitter voltageKollektor-Dauergleichstrom T = 65C I 100 ADC-collector current T = 25C I 130 APeriodischer Kollekto

Datasheet: AP05G120SW-HF , TSG10N120CN , AP05G120NSW-HF , AP20GT60SW , AP20GT60W , CI15T60 , MMIX4B12N300 , NGD8205A , IHW20N135R5 , IXYP8N90C3D1 , APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W .

History: NCE30TD60BP | FD200R12PT4_B6

Keywords - F4-100R12KS4 transistor datasheet

 F4-100R12KS4 cross reference
 F4-100R12KS4 equivalent finder
 F4-100R12KS4 lookup
 F4-100R12KS4 substitution
 F4-100R12KS4 replacement

 

 
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