F4-150R12KS4 Datasheet and Replacement
Type Designator: F4-150R12KS4
Type: IGBT
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 960 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 150 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 3.2 V @25℃
Tjⓘ - Maximum Junction Temperature: 125 ℃
trⓘ - Rise Time, typ: 50 nS
Package: MODULE
- IGBT Cross-Reference
F4-150R12KS4 Datasheet (PDF)
f4-150r12ks4.pdf

Technische Information / Technical InformationIGBT-ModuleF4-150R12KS4IGBT-modulesVorlufige DatenIGBT,Wechselrichter / IGBT,Inverter Preliminary DataHchstzulssige Werte / Maximum Rated ValuesKollektor-Emitter-SperrspannungT = 25C V 1200 Vvj CESCollector-emitter voltageKollektor-Dauergleichstrom T = 60C, T = 150C I 150 AC vj max C nomContinuous DC collector c
Datasheet: F3L400R07ME4_B23 , F3L400R07PE4_B26 , F3L400R12PT4_B26 , F3L75R07W2E3_B11 , F3L75R12W1H3_B27 , F3L80R12W1H3_B11 , F4-100R06KL4 , F4-100R12KS4 , RJP6065DPM , F4-200R06KL4 , F4-30R06W1E3 , F4-50R06W1E3 , F4-50R07W2H3_B51 , F4-50R12KS4 , F4-50R12KS4_B11 , F4-50R12MS4 , F4-75R06W1E3 .
History: AOTF5B65M2 | MMG300D120B6UC
Keywords - F4-150R12KS4 transistor datasheet
F4-150R12KS4 cross reference
F4-150R12KS4 equivalent finder
F4-150R12KS4 lookup
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F4-150R12KS4 replacement
History: AOTF5B65M2 | MMG300D120B6UC



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