All IGBT. F4-150R12KS4 Datasheet

 

F4-150R12KS4 Datasheet and Replacement


   Type Designator: F4-150R12KS4
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 960 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 150 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 3.2 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.5 V
   Tj ⓘ - Maximum Junction Temperature: 125 ℃
   tr ⓘ - Rise Time, typ: 50 nS
   Package: MODULE
 

 F4-150R12KS4 substitution

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F4-150R12KS4 Datasheet (PDF)

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F4-150R12KS4

Technische Information / Technical InformationIGBT-ModuleF4-150R12KS4IGBT-modulesVorlufige DatenIGBT,Wechselrichter / IGBT,Inverter Preliminary DataHchstzulssige Werte / Maximum Rated ValuesKollektor-Emitter-SperrspannungT = 25C V 1200 Vvj CESCollector-emitter voltageKollektor-Dauergleichstrom T = 60C, T = 150C I 150 AC vj max C nomContinuous DC collector c

Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , IKW30N60H3 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

History: IRGS4607D | CPV363M4KPBF | MMG200DR120DE

Keywords - F4-150R12KS4 transistor datasheet

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 F4-150R12KS4 equivalent finder
 F4-150R12KS4 lookup
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 F4-150R12KS4 replacement

 

 
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