All IGBT. F4-150R12KS4 Datasheet

 

F4-150R12KS4 IGBT. Datasheet pdf. Equivalent


   Type Designator: F4-150R12KS4
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 960 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 150 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 3.2 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.5 V
   Tjⓘ - Maximum Junction Temperature: 125 ℃
   trⓘ - Rise Time, typ: 50 nS
   Package: MODULE

 F4-150R12KS4 Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

F4-150R12KS4 Datasheet (PDF)

 ..1. Size:518K  infineon
 f4-150r12ks4.pdf

F4-150R12KS4 F4-150R12KS4

Technische Information / Technical InformationIGBT-ModuleF4-150R12KS4IGBT-modulesVorlufige DatenIGBT,Wechselrichter / IGBT,Inverter Preliminary DataHchstzulssige Werte / Maximum Rated ValuesKollektor-Emitter-SperrspannungT = 25C V 1200 Vvj CESCollector-emitter voltageKollektor-Dauergleichstrom T = 60C, T = 150C I 150 AC vj max C nomContinuous DC collector c

Datasheet: F3L400R07ME4_B23 , F3L400R07PE4_B26 , F3L400R12PT4_B26 , F3L75R07W2E3_B11 , F3L75R12W1H3_B27 , F3L80R12W1H3_B11 , F4-100R06KL4 , F4-100R12KS4 , TGAN40N60FD , F4-200R06KL4 , F4-30R06W1E3 , F4-50R06W1E3 , F4-50R07W2H3_B51 , F4-50R12KS4 , F4-50R12KS4_B11 , F4-50R12MS4 , F4-75R06W1E3 .

 

 
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