F4-150R12KS4 PDF and Equivalents Search

 

F4-150R12KS4 Specs and Replacement

Type Designator: F4-150R12KS4

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 960 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 150 A @25℃

Tj ⓘ - Maximum Junction Temperature: 125 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 3.2 V @25℃

tr ⓘ - Rise Time, typ: 50 nS

Package: MODULE

 F4-150R12KS4 Substitution

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F4-150R12KS4 datasheet

 ..1. Size:518K  infineon
 f4-150r12ks4.pdf pdf_icon

F4-150R12KS4

Technische Information / Technical Information IGBT-Module F4-150R12KS4 IGBT-modules Vorl ufige Daten IGBT,Wechselrichter / IGBT,Inverter Preliminary Data H chstzul ssige Werte / Maximum Rated Values Kollektor-Emitter-Sperrspannung T = 25 C V 1200 V vj CES Collector-emitter voltage Kollektor-Dauergleichstrom T = 60 C, T = 150 C I 150 A C vj max C nom Continuous DC collector c... See More ⇒

Specs: F3L400R07ME4_B23, F3L400R07PE4_B26, F3L400R12PT4_B26, F3L75R07W2E3_B11, F3L75R12W1H3_B27, F3L80R12W1H3_B11, F4-100R06KL4, F4-100R12KS4, FGPF4533, F4-200R06KL4, F4-30R06W1E3, F4-50R06W1E3, F4-50R07W2H3_B51, F4-50R12KS4, F4-50R12KS4_B11, F4-50R12MS4, F4-75R06W1E3

Keywords - F4-150R12KS4 transistor spec

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