All IGBT. F4-30R06W1E3 Datasheet

 

F4-30R06W1E3 IGBT. Datasheet pdf. Equivalent


   Type Designator: F4-30R06W1E3
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 165 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 30 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.55 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.5 V
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 23 nS
   Package: MODULE

 F4-30R06W1E3 Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

F4-30R06W1E3 Datasheet (PDF)

 ..1. Size:747K  infineon
 f4-30r06w1e3.pdf

F4-30R06W1E3 F4-30R06W1E3

Technische Information / Technical InformationIGBT-ModuleF4-30R06W1E3IGBT-modulesEasyPACK Modul mit Trench/Feldstopp IGBT3 und Emitter Controlled 3 Diode und NTCEasyPACK module with Trench/Fieldstop IGBT3 and Emitter Controlled 3 diode and NTCV = 600VCESI = 30A / I = 60AC nom CRMTypische Anwendungen Typical Applications Hilfsumrichter Auxiliary Inverters In

Datasheet: F3L400R12PT4_B26 , F3L75R07W2E3_B11 , F3L75R12W1H3_B27 , F3L80R12W1H3_B11 , F4-100R06KL4 , F4-100R12KS4 , F4-150R12KS4 , F4-200R06KL4 , RJP63K2DPP-M0 , F4-50R06W1E3 , F4-50R07W2H3_B51 , F4-50R12KS4 , F4-50R12KS4_B11 , F4-50R12MS4 , F4-75R06W1E3 , F4-75R07W2H3_B51 , F4-75R12KS4 .

 

 
Back to Top