All IGBT. F4-30R06W1E3 Datasheet

 

F4-30R06W1E3 IGBT. Datasheet pdf. Equivalent


   Type Designator: F4-30R06W1E3
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 165 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 30 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.55 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.5 V
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 23 nS
   Package: MODULE

 F4-30R06W1E3 Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

F4-30R06W1E3 Datasheet (PDF)

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 f4-30r06w1e3.pdf

F4-30R06W1E3 F4-30R06W1E3

Technische Information / Technical InformationIGBT-ModuleF4-30R06W1E3IGBT-modulesEasyPACK Modul mit Trench/Feldstopp IGBT3 und Emitter Controlled 3 Diode und NTCEasyPACK module with Trench/Fieldstop IGBT3 and Emitter Controlled 3 diode and NTCV = 600VCESI = 30A / I = 60AC nom CRMTypische Anwendungen Typical Applications Hilfsumrichter Auxiliary Inverters In

Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , CRG60T60AK3HD , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

 

 
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