F4-30R06W1E3 PDF and Equivalents Search

 

F4-30R06W1E3 Specs and Replacement

Type Designator: F4-30R06W1E3

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 165 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 30 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.55 V @25℃

tr ⓘ - Rise Time, typ: 23 nS

Package: MODULE

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F4-30R06W1E3 datasheet

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f4-30r06w1e3.pdf pdf_icon

F4-30R06W1E3

Technische Information / Technical Information IGBT-Module F4-30R06W1E3 IGBT-modules EasyPACK Modul mit Trench/Feldstopp IGBT3 und Emitter Controlled 3 Diode und NTC EasyPACK module with Trench/Fieldstop IGBT3 and Emitter Controlled 3 diode and NTC V = 600V CES I = 30A / I = 60A C nom CRM Typische Anwendungen Typical Applications Hilfsumrichter Auxiliary Inverters In... See More ⇒

Specs: F3L400R12PT4_B26, F3L75R07W2E3_B11, F3L75R12W1H3_B27, F3L80R12W1H3_B11, F4-100R06KL4, F4-100R12KS4, F4-150R12KS4, F4-200R06KL4, RJP63K2DPP-M0, F4-50R06W1E3, F4-50R07W2H3_B51, F4-50R12KS4, F4-50R12KS4_B11, F4-50R12MS4, F4-75R06W1E3, F4-75R07W2H3_B51, F4-75R12KS4

Keywords - F4-30R06W1E3 transistor spec

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