All IGBT. F4-30R06W1E3 Datasheet

 

F4-30R06W1E3 Datasheet and Replacement


   Type Designator: F4-30R06W1E3
   Type: IGBT
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 165 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 30 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.55 V @25℃
   Tj ⓘ - Maximum Junction Temperature: 150 ℃
   tr ⓘ - Rise Time, typ: 23 nS
   Package: MODULE
 

 F4-30R06W1E3 substitution

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F4-30R06W1E3 Datasheet (PDF)

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F4-30R06W1E3

Technische Information / Technical InformationIGBT-ModuleF4-30R06W1E3IGBT-modulesEasyPACK Modul mit Trench/Feldstopp IGBT3 und Emitter Controlled 3 Diode und NTCEasyPACK module with Trench/Fieldstop IGBT3 and Emitter Controlled 3 diode and NTCV = 600VCESI = 30A / I = 60AC nom CRMTypische Anwendungen Typical Applications Hilfsumrichter Auxiliary Inverters In

Datasheet: F3L400R12PT4_B26 , F3L75R07W2E3_B11 , F3L75R12W1H3_B27 , F3L80R12W1H3_B11 , F4-100R06KL4 , F4-100R12KS4 , F4-150R12KS4 , F4-200R06KL4 , RJP63K2DPP-M0 , F4-50R06W1E3 , F4-50R07W2H3_B51 , F4-50R12KS4 , F4-50R12KS4_B11 , F4-50R12MS4 , F4-75R06W1E3 , F4-75R07W2H3_B51 , F4-75R12KS4 .

History: DF200R12KE3 | IXBH15N160 | IGC36T120T8L | F3L100R07W2E3_B11 | SGT10T60SDM1D | DIM800DDM12-A | MWI50-12A7

Keywords - F4-30R06W1E3 transistor datasheet

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 F4-30R06W1E3 equivalent finder
 F4-30R06W1E3 lookup
 F4-30R06W1E3 substitution
 F4-30R06W1E3 replacement

 

 
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