All IGBT. F4-30R06W1E3 Datasheet

 

F4-30R06W1E3 Datasheet and Replacement


   Type Designator: F4-30R06W1E3
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 165 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 30 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.55 V @25℃
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 23 nS
   Package: MODULE
      - IGBT Cross-Reference

 

F4-30R06W1E3 Datasheet (PDF)

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F4-30R06W1E3

Technische Information / Technical InformationIGBT-ModuleF4-30R06W1E3IGBT-modulesEasyPACK Modul mit Trench/Feldstopp IGBT3 und Emitter Controlled 3 Diode und NTCEasyPACK module with Trench/Fieldstop IGBT3 and Emitter Controlled 3 diode and NTCV = 600VCESI = 30A / I = 60AC nom CRMTypische Anwendungen Typical Applications Hilfsumrichter Auxiliary Inverters In

Datasheet: AP05G120SW-HF , TSG10N120CN , AP05G120NSW-HF , AP20GT60SW , AP20GT60W , CI15T60 , MMIX4B12N300 , NGD8205A , IHW20N135R5 , IXYP8N90C3D1 , APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W .

History: IKA15N65ET6 | CM1400DU-24NF | CRG15T120BK3SD | JNG75T65HYU2 | IHW30N120R5 | APT30GP60BG | TT050K065FQ

Keywords - F4-30R06W1E3 transistor datasheet

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