FB20R06W1E3_B11 Specs and Replacement
Type Designator: FB20R06W1E3_B11
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 94 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 20 A @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.55 V @25℃
Package: MODULE FB20R06W1E3_B11 Substitution - IGBT ⓘ Cross-Reference Search
FB20R06W1E3_B11 datasheet
fb20r06w1e3 b11.pdf
/ Technical Information IGBT- FB20R06W1E3_B11 IGBT-modules EasyPIM / IGBT3 NTC EasyPIM module with Trench/Fieldstop IGBT3 and Emitter Controlled 3 diode and NTC V = 600V CES I = 20A / I = 40A C nom CRM Typical Applications Auxiliar... See More ⇒
fb20r06w1e3-b11.pdf
Technische Information / Technical Information IGBT-Module FB20R06W1E3_B11 IGBT-modules EasyPIM Modul mit Trench/Feldstopp IGBT3 und Emitter Controlled 3 Diode und NTC EasyPIM module with Trench/Fieldstop IGBT3 and Emitter Controlled 3 diode and NTC V = 600V CES I = 20A / I = 40A C nom CRM Typische Anwendungen Typical Applications Hilfsumrichter Auxiliary Inverters ... See More ⇒
fb20r06w1e3.pdf
Technische Information / Technical Information IGBT-Module FB20R06W1E3 IGBT-modules EasyPIM Modul mit Trench/Feldstopp IGBT3 und Emitter Controlled 3 Diode und NTC EasyPIM module with Trench/Fieldstop IGBT3 and Emitter Controlled 3 diode and NTC Vorl ufige Daten / Preliminary Data V = 600V CES I = 20A / I = 40A C nom CRM Typische Anwendungen Typical Applications Hilfs... See More ⇒
Specs: F4-75R12KS4 , F4-75R12KS4_B11 , F4-75R12MS4 , FB10R06KL4G , FB15R06KL4B1 , FB15R06W1E3 , FB20R06KL4 , FB20R06W1E3 , RJP30E2DPP-M0 , FB30R06W1E3 , FD1000R17IE4 , FD1000R17IE4D_B2 , FD1000R33HE3-K , FD1000R33HL3-K , FD1200R17KE3-K , FD1200R17KE3-K_B2 , FD1400R12IP4D .
History: FB15R06W1E3
Keywords - FB20R06W1E3_B11 transistor spec
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History: FB15R06W1E3
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IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE
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