FD1000R33HE3-K IGBT. Datasheet pdf. Equivalent
Type Designator: FD1000R33HE3-K
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 11500 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 1000 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.55 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.4 V
Tjⓘ - Maximum Junction Temperature: 150 ℃
trⓘ - Rise Time, typ: 550 nS
Package: MODULE
FD1000R33HE3-K Transistor Equivalent Substitute - IGBT Cross-Reference Search
FD1000R33HE3-K Datasheet (PDF)
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