All IGBT. FD200R12KE3 Datasheet

 

FD200R12KE3 Datasheet and Replacement


   Type Designator: FD200R12KE3
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 1050 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 200 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.7 V @25℃
   Tjⓘ - Maximum Junction Temperature: 125 ℃
   trⓘ - Rise Time, typ: 90 nS
   Package: MODULE
      - IGBT Cross-Reference

 

FD200R12KE3 Datasheet (PDF)

 ..1. Size:455K  infineon
fd200r12ke3.pdf pdf_icon

FD200R12KE3

Technische Information / Technical InformationIGBT-ModuleFD200R12KE3IGBT-modules62mm C-Serien Modul mit Trench/Feldstopp IGBT3 und Emitter Controlled High Efficiency Diode 62mm C-series module with trench/fieldstop IGBT3 and Emitter Controlled High Efficiency diode IGBT, Brems-Chopper / IGBT, Brake-ChopperHchstzulssige Werte / Maximum Rated ValuesKollektor-Emitter-Sperrspann

 0.1. Size:589K  infineon
fd200r12ke3p.pdf pdf_icon

FD200R12KE3

Technische Information / Technical InformationIGBT-ModulFD200R12KE3PIGBT-Module62mm C-Serien Modul mit Trench/Feldstopp IGBT3 und Emitter Controlled HE Diode und bereitsaufgetragenem Thermal Interface Material62mm C-Series module with Trench/Fieldstop IGBT3 and Emitter Controlled HE diode and pre-appliedThermal Interface MaterialVorlufige Daten / Preliminary DataV = 1200VC

 6.1. Size:828K  infineon
fd200r12pt4-b6.pdf pdf_icon

FD200R12KE3

Technische Information / Technical InformationIGBT-ModuleFD200R12PT4_B6IGBT-modulesEconoPACK4 Modul mit Trench/Feldstopp IGBT4 und Emitter Controlled Diode und NTCEconoPACK4 module with trench/fieldstop IGBT4 and Emitter Controlled Diode and NTCV = 1200VCESI = 200A / I = 400AC nom CRMTypische Anwendungen Typical Applications 3-Level-Applikationen 3-Level-Appli

 6.2. Size:783K  infineon
fd200r12pt4 b6.pdf pdf_icon

FD200R12KE3

Technische Information / Technical InformationIGBT-ModuleFD200R12PT4_B6IGBT-modulesEconoPACK4 Modul mit Trench/Feldstopp IGBT4 und Emitter Controlled Diode und NTCEconoPACK4 module with trench/fieldstop IGBT4 and Emitter Controlled Diode and NTCV = 1200VCESI = 200A / I = 400AC nom CRMTypische Anwendungen Typical Applications 3-Level-Applikationen 3-Level-Appli

Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , GT30F131 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

History: BSM35GD120DN2_E3224 | 7MBP100VDA060-50 | FGY75T95SQDT | AOK30B135W1 | STGBL6NC60DI | MMIX4B22N300 | MITB10WB1200TMH

Keywords - FD200R12KE3 transistor datasheet

 FD200R12KE3 cross reference
 FD200R12KE3 equivalent finder
 FD200R12KE3 lookup
 FD200R12KE3 substitution
 FD200R12KE3 replacement

 

 
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