FD600R06ME3_B11_S2 Datasheet and Replacement
Type Designator: FD600R06ME3_B11_S2
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Pc ⓘ - Maximum Power Dissipation: 2250 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 600 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.3 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.5 V
Tj ⓘ - Maximum Junction Temperature: 150 ℃
tr ⓘ - Rise Time, typ: 150 nS
Package: MODULE
FD600R06ME3_B11_S2 substitution
FD600R06ME3_B11_S2 Datasheet (PDF)
fd600r06me3 b11 s2.pdf
/ Technical InformationIGBT-FD600R06ME3_B11_S2IGBT-modulesEconoDUAL3 /IGBT3pressfitNTCEconoDUAL3 module with Trench/Fieldstop IGBT3 and Emitter Controlled 3 diode and PressFIT / NTC / Preliminary DataV = 600VCESI = 600A / I = 1200A
fd600r06me3 s2.pdf
/ Technical InformationIGBT-FD600R06ME3_S2IGBT-modulesEconoDUAL3 / IGBT3 and 3diode and NTCEconoDUAL3 module with Trench/Fieldstop IGBT3 and Emitter Controlled 3 diode and NTC / Preliminary
fd600r06me3-s2.pdf
Technische Information / Technical InformationIGBT-ModuleFD600R06ME3_S2IGBT-modulesEconoDUAL3 Modul mit Trench/Feldstopp IGBT3 und Emitter Controlled 3 Diode und NTCEconoDUAL3 module with Trench/Fieldstop IGBT3 and Emitter Controlled 3 diode and NTCVorlufige Daten / Preliminary DataV = 600VCESI = 600A / I = 1200AC nom CRMTypische Anwendungen Typical Applications
Datasheet: FD300R12KS4 , FD300R12KS4_B5 , FD400R12KE3_B5 , FD400R33KF2C , FD400R33KF2C-K , FD400R65KF1-K , FD401R17KF6C_B2 , FD500R65KE3-K , IHW20N135R5 , FD600R06ME3_S2 , FD600R12IP4D , FD600R12KF4 , FD600R16KF4 , FD600R17KE3_B2 , FD600R17KF6C_B2 , FD650R17IE4 , FD650R17IE4D_B2 .
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