All IGBT. FD900R12IP4D Datasheet

 

FD900R12IP4D Datasheet and Replacement


   Type Designator: FD900R12IP4D
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 5100 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 900 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.7 V @25℃
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 140 nS
   Package: MODULE
      - IGBT Cross-Reference

 

FD900R12IP4D Datasheet (PDF)

 ..1. Size:1767K  infineon
 fd900r12ip4d.pdf pdf_icon

FD900R12IP4D

Technische Information / Technical InformationIGBT-ModuleFD900R12IP4DIGBT-modulesPrimePACK2 Modul mit Trench/Feldstopp IGBT4, grerer Emitter Controlled 4 DiodePrimePACK2 module with Trench/Fieldstop IGBT4, enlarged Emitter Controlled 4 diodeVorlufige Daten / Preliminary DataV = 1200VCESI = 900A / I = 1800AC nom CRMTypische Anwendungen Typical Applications

 0.1. Size:1765K  infineon
 fd900r12ip4dv.pdf pdf_icon

FD900R12IP4D

Technische Information / Technical InformationIGBT-ModuleFD900R12IP4DVIGBT-modulesPrimePACK2 Modul mit Trench/Feldstopp IGBT4, grerer Emitter Controlled 4 DiodePrimePACK2 module with Trench/Fieldstop IGBT4, enlarged Emitter Controlled 4 diodeVorlufige Daten / Preliminary DataV = 1200VCESI = 900A / I = 1800AC nom CRMTypische Anwendungen Typical Applications

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History: IRG4BC10S | CM1400DU-24NF | CRG15T120BK3SD | JNG75T65HYU2 | IKW50N65F5 | APT50GN120L2DQ2G | TT050K065FQ

Keywords - FD900R12IP4D transistor datasheet

 FD900R12IP4D cross reference
 FD900R12IP4D equivalent finder
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