FD900R12IP4D PDF and Equivalents Search

 

FD900R12IP4D Specs and Replacement

Type Designator: FD900R12IP4D

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 5100 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 900 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.7 V @25℃

tr ⓘ - Rise Time, typ: 140 nS

Package: MODULE

 FD900R12IP4D Substitution

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FD900R12IP4D datasheet

 ..1. Size:1767K  infineon
 fd900r12ip4d.pdf pdf_icon

FD900R12IP4D

Technische Information / Technical Information IGBT-Module FD900R12IP4D IGBT-modules PrimePACK 2 Modul mit Trench/Feldstopp IGBT4, gr erer Emitter Controlled 4 Diode PrimePACK 2 module with Trench/Fieldstop IGBT4, enlarged Emitter Controlled 4 diode Vorl ufige Daten / Preliminary Data V = 1200V CES I = 900A / I = 1800A C nom CRM Typische Anwendungen Typical Applications ... See More ⇒

 0.1. Size:1765K  infineon
 fd900r12ip4dv.pdf pdf_icon

FD900R12IP4D

Technische Information / Technical Information IGBT-Module FD900R12IP4DV IGBT-modules PrimePACK 2 Modul mit Trench/Feldstopp IGBT4, gr erer Emitter Controlled 4 Diode PrimePACK 2 module with Trench/Fieldstop IGBT4, enlarged Emitter Controlled 4 diode Vorl ufige Daten / Preliminary Data V = 1200V CES I = 900A / I = 1800A C nom CRM Typische Anwendungen Typical Applications ... See More ⇒

Specs: FD600R17KF6C_B2, FD650R17IE4, FD650R17IE4D_B2, FD800R17KE3_B2, FD800R17KF6C_B2, FD800R33KF2C, FD800R33KF2C-K, FD800R33KL2C-K_B5, SGT60U65FD1PT, FD900R12IP4DV, FD-DF80R12W1H3_B52, FF1000R17IE4, FF1000R17IE4D_B2, FF200R06YE3, FF200R12KE4, FF200R12KS4, FF200R12KT3

Keywords - FD900R12IP4D transistor spec

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