FD900R12IP4DV Specs and Replacement
Type Designator: FD900R12IP4DV
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 5100 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 900 A @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.7 V @25℃
Package: MODULE FD900R12IP4DV Substitution - IGBTⓘ Cross-Reference Search
FD900R12IP4DV datasheet
fd900r12ip4dv.pdf
Technische Information / Technical Information IGBT-Module FD900R12IP4DV IGBT-modules PrimePACK 2 Modul mit Trench/Feldstopp IGBT4, gr erer Emitter Controlled 4 Diode PrimePACK 2 module with Trench/Fieldstop IGBT4, enlarged Emitter Controlled 4 diode Vorl ufige Daten / Preliminary Data V = 1200V CES I = 900A / I = 1800A C nom CRM Typische Anwendungen Typical Applications ... See More ⇒
fd900r12ip4d.pdf
Technische Information / Technical Information IGBT-Module FD900R12IP4D IGBT-modules PrimePACK 2 Modul mit Trench/Feldstopp IGBT4, gr erer Emitter Controlled 4 Diode PrimePACK 2 module with Trench/Fieldstop IGBT4, enlarged Emitter Controlled 4 diode Vorl ufige Daten / Preliminary Data V = 1200V CES I = 900A / I = 1800A C nom CRM Typische Anwendungen Typical Applications ... See More ⇒
Specs: FD650R17IE4, FD650R17IE4D_B2, FD800R17KE3_B2, FD800R17KF6C_B2, FD800R33KF2C, FD800R33KF2C-K, FD800R33KL2C-K_B5, FD900R12IP4D, IRG4PC50U, FD-DF80R12W1H3_B52, FF1000R17IE4, FF1000R17IE4D_B2, FF200R06YE3, FF200R12KE4, FF200R12KS4, FF200R12KT3, FF200R12KT3_E
Keywords - FD900R12IP4DV transistor spec
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