All IGBT. FF225R12ME3 Datasheet

 

FF225R12ME3 Datasheet and Replacement


   Type Designator: FF225R12ME3
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 1150 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 225 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.7 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.5 V
   Tj ⓘ - Maximum Junction Temperature: 125 ℃
   tr ⓘ - Rise Time, typ: 90 nS
   Package: MODULE
 

 FF225R12ME3 substitution

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FF225R12ME3 Datasheet (PDF)

 ..1. Size:677K  infineon
 ff225r12me3.pdf pdf_icon

FF225R12ME3

/ Technical InformationIGBT-FF225R12ME3IGBT-modulesEconoDUAL Modul mit Trench/Feldstop IGBT3 und High Efficiency Diode EconoDUAL module with trench/fieldstop IGBT3 and Emitter Controlled High Efficiency diode IGBT, / IGBT,Inverter Preliminary Data / Maximum Rated ValuesT = 25C V 1200 V

 4.1. Size:582K  infineon
 ff225r12me4p.pdf pdf_icon

FF225R12ME3

FF225R12ME4PEconoDUAL3 Modul mit Trench/Feldstopp IGBT4 und Emitter Controlled HE Diode und NTC / bereitsaufgetragenem Thermal Interface MaterialEconoDUAL3 module with Trench/Fieldstop IGBT4 and Emitter Controlled HE diode and NTC /pre-applied Thermal Interface MaterialV = 1200VCESI = 225A / I = 450AC nom CRMTypische Anwendungen Typical Applications Motorantriebe

 4.2. Size:897K  infineon
 ff225r12me4 b11.pdf pdf_icon

FF225R12ME3

/ Technical InformationIGBT-FF225R12ME4_B11IGBT-modulesEconoDUAL3 /IGBT4HEpressfitNTCEconoDUAL3 module with Trench/Fieldstop IGBT4 and Emitter Controlled HE diode and PressFIT / NTC / Preliminary DataV = 1200VCESI = 225A / I = 450AC no

 4.3. Size:694K  infineon
 ff225r12me4-b11.pdf pdf_icon

FF225R12ME3

Technische Information / Technical InformationIGBT-ModuleFF225R12ME4_B11IGBT-modulesEconoDUAL3 Modul mit Trench/Feldstopp IGBT4 und Emitter Controlled HE Diode und PressFIT / NTCEconoDUAL3 module with Trench/Fieldstop IGBT4 and Emitter Controlled HE diode and PressFIT / NTCVorlufige Daten / Preliminary DataV = 1200VCESI = 225A / I = 450AC nom CRMTypische Anwendunge

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Keywords - FF225R12ME3 transistor datasheet

 FF225R12ME3 cross reference
 FF225R12ME3 equivalent finder
 FF225R12ME3 lookup
 FF225R12ME3 substitution
 FF225R12ME3 replacement

 

 
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