FF300R07ME4_B11 IGBT. Datasheet pdf. Equivalent
Type Designator: FF300R07ME4_B11
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 1100 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 300 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.55 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.4 V
Tjⓘ - Maximum Junction Temperature: 150 ℃
trⓘ - Rise Time, typ: 60 nS
Package: MODULE
FF300R07ME4_B11 Transistor Equivalent Substitute - IGBT Cross-Reference Search
FF300R07ME4_B11 Datasheet (PDF)
ff300r07me4 b11.pdf
/ Technical InformationIGBT-FF300R07ME4_B11IGBT-ModuleEconoDUAL3 / IGBT4 and diode andNTCEconoDUAL3 module with trench/fieldstop IGBT4 and Emitter Controlled Diode and NTCV = 650VCESI = 300A / I = 600AC
ff300r07me4-b11.pdf
Technische Information / Technical InformationIGBT-ModulFF300R07ME4_B11IGBT-ModuleEconoDUAL3 Modul mit Trench/Feldstopp IGBT4 und Emitter Controlled Diode und NTCEconoDUAL3 module with trench/fieldstop IGBT4 and Emitter Controlled Diode and NTCV = 650VCESI = 300A / I = 600AC nom CRMTypische Anwendungen Typical Applications Hybrid-Nutzfahrzeuge Commercial Agric
ff300r07ke4.pdf
Technische Information / Technical InformationIGBT-ModuleFF300R07KE4IGBT-modules62mm C-Serien Modul mit Trench/Feldstopp IGBT4 und Emitter Controlled Diode62mm C-Series module with trench/fieldstop IGBT4 and Emitter Controlled DiodeVorlufige Daten / Preliminary DataV = 650VCESI = 300A / I = 600AC nom CRMTypische Anwendungen Typical Applications Hochleistungsumrichte
Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , CRG60T60AK3HD , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .
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