FF150R12KS4 IGBT. Datasheet pdf. Equivalent
Type Designator: FF150R12KS4
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 1250 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 150 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 3.2 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.5 V
Tjⓘ - Maximum Junction Temperature: 125 ℃
trⓘ - Rise Time, typ: 60 nS
Package: MODULE
FF150R12KS4 Transistor Equivalent Substitute - IGBT Cross-Reference Search
FF150R12KS4 Datasheet (PDF)
ff150r12ks4 b2.pdf
/ Technical InformationIGBT-FF150R12KS4_B2IGBT-modules62mm C-Series IGBT62mm C-Series module with the fast IGBT2 for high-frequency switchingV = 1200VCESI = 150A / I = 300AC nom CRM Typical Applications High Frequency Switching Application
ff150r12ks4.pdf
Technische Information / Technical InformationIGBT-ModuleFF150R12KS4IGBT-modules62mm C-Serien Modul mit schnellem IGBT2 fr hochfrequentes Schalten62mm C-Series module with the fast IGBT2 for high-frequency switchingV = 1200VCESI = 150A / I = 300AC nom CRMTypische Anwendungen Typical Applications Anwendungen mit hohen Schaltfrequenzen High Frequency Switching Appli
ff150r12kt3g.pdf
Technische Information / Technical InformationIGBT-ModuleFF150R12KT3GIGBT-modules62mm C-Serien Modul mit schnellem Trench/Feldstop IGBT3 und Emitter Controlled High Efficiency Diode 62mm C-series module with the fast trench/fieldstop IGBT3 and Emitter Controlled High Efficiency diode IGBT,Wechselrichter / IGBT,InverterHchstzulssige Werte / Maximum Rated ValuesKollektor-Emitt
ff150r12ke3g.pdf
Technische Information / Technical InformationIGBT-ModuleFF150R12KE3GIGBT-modules62mm C-Serien Modul mit Trench/Feldstop IGBT3 und Emitter Controlled High Efficiency Diode 62mm C-series module with the trench/fieldstop IGBT3 and Emitter Controlled High Efficiency diode IGBT,Wechselrichter / IGBT,InverterHchstzulssige Werte / Maximum Rated ValuesKollektor-Emitter-Sperrspannun
ff150r12ms4g.pdf
Technische Information / Technical InformationIGBT-ModuleFF150R12MS4GIGBT-modulesEconoDUAL3 Modul mit schnellem IGBT2 fr hochfrequentes Schalten EconoDUAL3 module with fast IGBT2 for high switching frequency Vorlufige DatenIGBT,Wechselrichter / IGBT,Inverter Preliminary DataHchstzulssige Werte / Maximum Rated ValuesKollektor-Emitter-SperrspannungT = 25C V 120
ff150r12me3g.pdf
Technische Information / Technical InformationIGBT-ModuleFF150R12ME3GIGBT-modulesEconoDUAL Modul mit Trench/Feldstop IGBT3 und High Efficiency Diode EconoDUAL module with trench/fieldstop IGBT3 and Emitter Controlled High Efficiency diode Vorlufige DatenIGBT,Wechselrichter / IGBT,Inverter Preliminary DataHchstzulssige Werte / Maximum Rated ValuesKollektor-Emitter-S
ff150r12yt3.pdf
/ Technical InformationIGBT-FF150R12YT3IGBT-modulesIGBT, / IGBT,Inverter Preliminary Data / Maximum Rated ValuesT = 25C V 1200 Vvj CESCollector-emitter voltage T = 80C, T = 150C I 150 AC vj max C nomContinuous DC collector current T = 25C, T = 150C I
ff150r12rt4.pdf
Technische Information / Technical InformationIGBT-ModuleFF150R12RT4IGBT-modules34mm Modul mit schnellem Trench/Feldstopp IGBT4 und Emitter Controlled 4 Diode34mm module with fast Trench/Fieldstop IGBT4 and Emitter Controlled 4 diodeVorlufige Daten / Preliminary DataV = 1200VCESI = 150A / I = 300AC nom CRMTypische Anwendungen Typical Applications Anwendungen mit hoh
Datasheet: FF100R12RT4 , FF100R12YT3 , FF1200R12KE3 , FF1200R17KE3 , FF1200R17KE3_B2 , FF1200R17KP4_B2 , FF1400R17IP4 , FF150R12KE3G , IHW20N120R2 , FF150R12KS4_B2 , FF150R12KT3G , FF150R12ME3G , FF150R12MS4G , FF150R12RT4 , FF150R12YT3 , FF150R17KE4 , BSM100GAL120DN2 .
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