All IGBT. BSM50GD120DN2E3226 Datasheet

 

BSM50GD120DN2E3226 IGBT. Datasheet pdf. Equivalent

Type Designator: BSM50GD120DN2E3226

Type of IGBT Channel: N-Channel

Maximum Power Dissipation (Pc), W: 350

Maximum Collector-Emitter Voltage |Vce|, V: 1200

Collector-Emitter saturation Voltage |Vcesat|, V: 3

Maximum Gate-Emitter Voltage |Veg|, V: 20

Maximum Collector Current |Ic|, A: 50

Maximum Junction Temperature (Tj), °C: 150

Rise Time, nS: 56

Maximum Collector Capacity (Cc), pF: 500

Package: MODULE

BSM50GD120DN2E3226 Transistor Equivalent Substitute - IGBT Cross-Reference Search

BSM50GD120DN2E3226 Datasheet (PDF)

1.1. bsm50gd120dn2g.pdf Size:241K _igbt_a

BSM50GD120DN2E3226
BSM50GD120DN2E3226

BSM 50 GD 120 DN2G IGBT Power Module • Power module • 3-phase full-bridge • Including fast free-wheel diodes • Package with insulated metal base plate Type VCE IC Package Ordering Code BSM 50 GD 120 DN2G 1200V 78A ECONOPACK 3 C67070-A2521-A67 Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage VCE 1200 V Collector-gate voltage VCGR RGE = 20 kΩ 1200 Gate

1.2. bsm50gd120dn2.pdf Size:278K _igbt_a

BSM50GD120DN2E3226
BSM50GD120DN2E3226

BSM 50 GD 120 DN2 IGBT Power Module • Power module • 3-phase full-bridge • Including fast free-wheel diodes • Package with insulated metal base plate Type VCE IC Package Ordering Code BSM 50 GD 120 DN2 1200V 72A ECONOPACK 2K C67076-A2514-A67 Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage VCE 1200 V Collector-gate voltage VCGR RGE = 20 kΩ 1200 Gate-

1.3. bsm50gd120dn2e3226.pdf Size:444K _igbt_a

BSM50GD120DN2E3226
BSM50GD120DN2E3226

-40...+125 2006-02-01 2006-02-01 2006-02-01 2006-02-01 2006-02-01 2006-02-01 2006-02-01 2006-02-01 BSM 50 GD 120 DN2 E3226 Gehäusemaße / Schaltbild Package outline / Circuit diagramm 9 2006-02-01 Nutzungsbedingungen Die in diesem Produktdatenblatt enthaltenen Daten sind ausschließlich für technisch geschultes Fachpersonal bestimmt. Die Beurteilung der Geeignetheit

1.4. bsm50gd120dlc.pdf Size:59K _igbt_a

BSM50GD120DN2E3226
BSM50GD120DN2E3226

Technische Information / Technical Information IGBT-Module BSM50GD120DLC IGBT-Modules Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung VCES 1200 V collector-emitter voltage TC = 80 °C IC,nom. 50 A Kollektor-Dauergleichstrom DC-collector current TC = 25 °C IC 85 A Periodischer Kollektor Spitzenstrom

Datasheet: BSM50GAL100D , BSM50GB100D , BSM50GB120DLC , BSM50GB120DN2 , BSM50GB170DN2 , BSM50GB60DLC , BSM50GD120DLC , BSM50GD120DN2 , RJH60F5DPK , BSM50GD120DN2G , BSM50GD170DL , BSM50GD60DLC , BSM50GD60DLC_E3226 , BSM50GP120 , BSM50GP60 , SKM450GB12E4 , SKM50GAL12T4 .

 


BSM50GD120DN2E3226
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  BSM50GD120DN2E3226
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  BSM50GD120DN2E3226
  BSM50GD120DN2E3226
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