BSM50GD120DN2G Specs and Replacement
Type Designator: BSM50GD120DN2G
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 400 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 50 A @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 3 V @25℃
tr ⓘ - Rise Time, typ: 56 nS
Coesⓘ - Output Capacitance, typ: 500 pF
Package: MODULE BSM50GD120DN2G Substitution - IGBTⓘ Cross-Reference Search
BSM50GD120DN2G datasheet
bsm50gd120dn2g.pdf
BSM 50 GD 120 DN2G IGBT Power Module Power module 3-phase full-bridge Including fast free-wheel diodes Package with insulated metal base plate Type VCE IC Package Ordering Code BSM 50 GD 120 DN2G 1200V 78A ECONOPACK 3 C67070-A2521-A67 Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage VCE 1200 V Collector-gate voltage VCGR RGE = 20 k 1200 Gate... See More ⇒
bsm50gd120dn2.pdf
BSM 50 GD 120 DN2 IGBT Power Module Power module 3-phase full-bridge Including fast free-wheel diodes Package with insulated metal base plate Type VCE IC Package Ordering Code BSM 50 GD 120 DN2 1200V 72A ECONOPACK 2K C67076-A2514-A67 Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage VCE 1200 V Collector-gate voltage VCGR RGE = 20 k 1200 Gate-... See More ⇒
bsm50gd120dn2e3226.pdf
-40...+125 2006-02-01 2006-02-01 2006-02-01 2006-02-01 2006-02-01 2006-02-01 2006-02-01 2006-02-01 BSM 50 GD 120 DN2 E3226 Geh usema e / Schaltbild Package outline / Circuit diagramm 9 2006-02-01 Nutzungsbedingungen Die in diesem Produktdatenblatt enthaltenen Daten sind ausschlie lich f r technisch geschultes Fachpersonal bestimmt. Die Beurteilung der Geeignetheit ... See More ⇒
bsm50gd120dlc.pdf
Technische Information / Technical Information IGBT-Module BSM50GD120DLC IGBT-Modules H chstzul ssige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung VCES 1200 V collector-emitter voltage TC = 80 C IC,nom. 50 A Kollektor-Dauergleichstrom DC-collector current TC = 25 C IC 85 A Periodischer Kollektor Spitzenstrom ... See More ⇒
Specs: BSM50GB100D, BSM50GB120DLC, BSM50GB120DN2, BSM50GB170DN2, BSM50GB60DLC, BSM50GD120DLC, BSM50GD120DN2, BSM50GD120DN2E3226, SGT40N60NPFDPN, BSM50GD170DL, BSM50GD60DLC, BSM50GD60DLC_E3226, BSM50GP120, BSM50GP60, SKM450GB12E4, SKM50GAL12T4, SKM50GB12T4
Keywords - BSM50GD120DN2G transistor spec
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