All IGBT. BSM50GD120DN2G Datasheet

 

BSM50GD120DN2G Datasheet and Replacement


   Type Designator: BSM50GD120DN2G
   Type: IGBT
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 400 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 50 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 3 V @25℃
   Tj ⓘ - Maximum Junction Temperature: 150 ℃
   tr ⓘ - Rise Time, typ: 56 nS
   Coesⓘ - Output Capacitance, typ: 500 pF
   Package: MODULE
 

 BSM50GD120DN2G substitution

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BSM50GD120DN2G Datasheet (PDF)

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bsm50gd120dn2g.pdf pdf_icon

BSM50GD120DN2G

BSM 50 GD 120 DN2GIGBT Power Module Power module 3-phase full-bridge Including fast free-wheel diodes Package with insulated metal base plateType VCE IC Package Ordering CodeBSM 50 GD 120 DN2G 1200V 78A ECONOPACK 3 C67070-A2521-A67Maximum RatingsParameter Symbol Values UnitCollector-emitter voltage VCE 1200 VCollector-gate voltage VCGRRGE = 20 k 1200Gate

 1.1. Size:278K  eupec
bsm50gd120dn2.pdf pdf_icon

BSM50GD120DN2G

BSM 50 GD 120 DN2IGBT Power Module Power module 3-phase full-bridge Including fast free-wheel diodes Package with insulated metal base plateType VCE IC Package Ordering CodeBSM 50 GD 120 DN2 1200V 72A ECONOPACK 2K C67076-A2514-A67Maximum RatingsParameter Symbol Values UnitCollector-emitter voltage VCE 1200 VCollector-gate voltage VCGRRGE = 20 k 1200Gate-

 1.2. Size:444K  eupec
bsm50gd120dn2e3226.pdf pdf_icon

BSM50GD120DN2G

-40...+1252006-02-012006-02-012006-02-012006-02-012006-02-012006-02-012006-02-012006-02-01BSM 50 GD 120 DN2 E3226Gehusemae / SchaltbildPackage outline / Circuit diagramm9 2006-02-01Nutzungsbedingungen Die in diesem Produktdatenblatt enthaltenen Daten sind ausschlielich fr technisch geschultes Fachpersonal bestimmt. Die Beurteilung der Geeignetheit

 3.1. Size:59K  eupec
bsm50gd120dlc.pdf pdf_icon

BSM50GD120DN2G

Technische Information / Technical InformationIGBT-ModuleBSM50GD120DLCIGBT-ModulesHchstzulssige Werte / Maximum rated valuesElektrische Eigenschaften / Electrical propertiesKollektor-Emitter-Sperrspannung VCES 1200 Vcollector-emitter voltageTC = 80 C IC,nom. 50 AKollektor-DauergleichstromDC-collector currentTC = 25 C IC 85 APeriodischer Kollektor Spitzenstrom

Datasheet: BSM50GB100D , BSM50GB120DLC , BSM50GB120DN2 , BSM50GB170DN2 , BSM50GB60DLC , BSM50GD120DLC , BSM50GD120DN2 , BSM50GD120DN2E3226 , RJP30H1DPD , BSM50GD170DL , BSM50GD60DLC , BSM50GD60DLC_E3226 , BSM50GP120 , BSM50GP60 , SKM450GB12E4 , SKM50GAL12T4 , SKM50GB12T4 .

History: 2MBI300U4N-170-50

Keywords - BSM50GD120DN2G transistor datasheet

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