SKM600GA12E4 Spec and Replacement, IGBT Equivalent Finder, Cross Reference

SKM600GA12E4 Specs and Replacement

Type Designator: SKM600GA12E4

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 913 A @25℃

Tj ⓘ - Maximum Junction Temperature: 175 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.8 V @25℃

tr ⓘ - Rise Time, typ: 90 nS

Coesⓘ - Output Capacitance, typ: 2320 pF

Package: MODULE

SKM600GA12E4 Substitution

- IGBT ⓘ Cross-Reference Search

SKM600GA12E4 datasheet

..1. Size:627K semikron
skm600ga12e4.pdf pdf_icon

SKM600GA12E4 Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES Tj =25 C 1200 V IC Tc =25 C 913 A Tj = 175 C Tc =80 C 702 A ICnom 600 A ICRM ICRM = 3xICnom 1800 A VGES -20 ... 20 V VCC = 800 V SEMITRANS 4 tpsc VGE 15 V Tj =150 C 10 s VCES 1200 V Tj -40 ... 175 C IGBT4 Modules Inverse diode IF Tc =25 C 707 A Tj = 175 C SKM600GA12E4 Tc =8... See More ⇒

4.1. Size:623K semikron
skm600ga12t4.pdf pdf_icon

SKM600GA12T4 Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES Tj =25 C 1200 V IC Tc =25 C 913 A Tj = 175 C Tc =80 C 702 A ICnom 600 A ICRM ICRM = 3xICnom 1800 A VGES -20 ... 20 V VCC = 800 V SEMITRANS 4 tpsc VGE 15 V Tj =150 C 10 s VCES 1200 V Tj -40 ... 175 C Fast IGBT4 Modules Inverse diode IF Tc =25 C 707 A Tj = 175 C SKM600GA12T4 ... See More ⇒

4.2. Size:414K semikron
skm600ga12v.pdf pdf_icon

SKM600GA12V Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES Tj =25 C 1200 V IC Tc =25 C 908 A Tj = 175 C Tc =80 C 692 A ICnom 600 A ICRM ICRM = 3xICnom 1800 A VGES -20 ... 20 V VCC = 720 V SEMITRANS 4 tpsc VGE 15 V Tj =125 C 10 s VCES 1200 V Tj -40 ... 175 C Inverse diode IF Tc =25 C 707 A Tj = 175 C SKM600GA12V Tc =80 C 529 A IFnom... See More ⇒

5.1. Size:849K semikron
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