SKM600GB066D Specs and Replacement
Type Designator: SKM600GB066D
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 760 A @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.45 V @25℃
tr ⓘ - Rise Time, typ: 77 nS
Coesⓘ - Output Capacitance, typ: 2300 pF
Package: MODULE SKM600GB066D Substitution - IGBT ⓘ Cross-Reference Search
SKM600GB066D datasheet
skm600ga12t4.pdf
SKM600GA12T4 Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES Tj =25 C 1200 V IC Tc =25 C 913 A Tj = 175 C Tc =80 C 702 A ICnom 600 A ICRM ICRM = 3xICnom 1800 A VGES -20 ... 20 V VCC = 800 V SEMITRANS 4 tpsc VGE 15 V Tj =150 C 10 s VCES 1200 V Tj -40 ... 175 C Fast IGBT4 Modules Inverse diode IF Tc =25 C 707 A Tj = 175 C SKM600GA12T4 ... See More ⇒
skm600ga12e4.pdf
SKM600GA12E4 Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES Tj =25 C 1200 V IC Tc =25 C 913 A Tj = 175 C Tc =80 C 702 A ICnom 600 A ICRM ICRM = 3xICnom 1800 A VGES -20 ... 20 V VCC = 800 V SEMITRANS 4 tpsc VGE 15 V Tj =150 C 10 s VCES 1200 V Tj -40 ... 175 C IGBT4 Modules Inverse diode IF Tc =25 C 707 A Tj = 175 C SKM600GA12E4 Tc =8... See More ⇒
Specs: SKM450GB12E4 , SKM50GAL12T4 , SKM50GB12T4 , SKM50GB12V , SKM600GA12E4 , SKM600GA12T4 , SKM600GA12V , SKM600GA176D , G50T65D , SKM600GB126D , SII100N06 , SII100N12 , SII150N06 , SII150N12 , SII200N06 , SII200N12 , SII300N06 .
Keywords - SKM600GB066D transistor spec
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