All IGBT. SII50N06 Datasheet

 

SII50N06 Datasheet and Replacement


   Type Designator: SII50N06
   Type: IGBT
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 280 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 75 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.95 V @25℃
   Tj ⓘ - Maximum Junction Temperature: 125 ℃
   tr ⓘ - Rise Time, typ: 9 nS
   Package: MODULE
 

 SII50N06 substitution

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SII50N06 Datasheet (PDF)

 ..1. Size:1159K  sirectifier
 sii50n06.pdf pdf_icon

SII50N06

SII50N06NPT IGBT ModulesDimensions in mm (1mm = 0.0394")TC = 25oC, unless otherwise specifiedAbsolute Maximum RatingsSymbol Conditions Values UnitsIGBT Wechselrichter/ IGBT InverterVCES 600 VIC 75(50) TC= 25(80)oC, Tvj= 150oC AICRM 100 TC= 80oC, tP =1ms APtotTC= 25oC, Tvj= 150oC 280 W_VGES +20VDiode Wechselrichter/ Diode Inverter VRRM 600 VIF 50 AIFRM10

 9.1. Size:503K  powersem
 psii50-06.pdf pdf_icon

SII50N06

IGBT Module IC80 = 48 APSII 50/06* VCES = 600 VPreliminary Data SheetVCE(sat)typ. = 2.3 VS15R15A15 G15N15ECO-TOPTM 1A7 V12V9A9 V13V10D1K1 Q1A1N1G1U1V1V3 V6typical picture, for pinconfiguration see outlineIGBTsdrawingSymbol Conditions Maximum RatingsVCES TVJ = 25C to 150C 600 V*NTC optionalVGES 20 VIC25 TC = 25C 69 AIC80 TC =

Datasheet: SKM600GB126D , SII100N06 , SII100N12 , SII150N06 , SII150N12 , SII200N06 , SII200N12 , SII300N06 , MBQ50T65FDSC , SII75N06 , SII75N12 , MMIX1B15N300C , MMIX1B20N300C , MMIX1G120N120A3V1 , MMIX1X200N60B3 , MMIX1X200N60B3H1 , MMIX1X340N65B4 .

History: FGH40T120SMD-F155 | APT50GT120B2RG | APT40GP90JDQ2 | IXGH6N170

Keywords - SII50N06 transistor datasheet

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