All IGBT. SII50N06 Datasheet

 

SII50N06 IGBT. Datasheet pdf. Equivalent


   Type Designator: SII50N06
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 280 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 75 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.95 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.5 V
   Tjⓘ - Maximum Junction Temperature: 125 ℃
   trⓘ - Rise Time, typ: 9 nS
   Package: MODULE

 SII50N06 Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

SII50N06 Datasheet (PDF)

 ..1. Size:1159K  sirectifier
 sii50n06.pdf

SII50N06 SII50N06

SII50N06NPT IGBT ModulesDimensions in mm (1mm = 0.0394")TC = 25oC, unless otherwise specifiedAbsolute Maximum RatingsSymbol Conditions Values UnitsIGBT Wechselrichter/ IGBT InverterVCES 600 VIC 75(50) TC= 25(80)oC, Tvj= 150oC AICRM 100 TC= 80oC, tP =1ms APtotTC= 25oC, Tvj= 150oC 280 W_VGES +20VDiode Wechselrichter/ Diode Inverter VRRM 600 VIF 50 AIFRM10

 9.1. Size:503K  powersem
 psii50-06.pdf

SII50N06 SII50N06

IGBT Module IC80 = 48 APSII 50/06* VCES = 600 VPreliminary Data SheetVCE(sat)typ. = 2.3 VS15R15A15 G15N15ECO-TOPTM 1A7 V12V9A9 V13V10D1K1 Q1A1N1G1U1V1V3 V6typical picture, for pinconfiguration see outlineIGBTsdrawingSymbol Conditions Maximum RatingsVCES TVJ = 25C to 150C 600 V*NTC optionalVGES 20 VIC25 TC = 25C 69 AIC80 TC =

Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , CRG60T60AK3HD , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

 

 
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