SII50N06 PDF and Equivalents Search

 

SII50N06 Specs and Replacement

Type Designator: SII50N06

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 280 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 75 A @25℃

Tj ⓘ - Maximum Junction Temperature: 125 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.95 V @25℃

tr ⓘ - Rise Time, typ: 9 nS

Package: MODULE

 SII50N06 Substitution

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SII50N06 datasheet

 ..1. Size:1159K  sirectifier
 sii50n06.pdf pdf_icon

SII50N06

SII50N06 NPT IGBT Modules Dimensions in mm (1mm = 0.0394") TC = 25oC, unless otherwise specified Absolute Maximum Ratings Symbol Conditions Values Units IGBT Wechselrichter/ IGBT Inverter VCES 600 V IC 75(50) TC= 25(80)oC, Tvj= 150oC A ICRM 100 TC= 80oC, tP =1ms A Ptot TC= 25oC, Tvj= 150oC 280 W _ VGES +20 V Diode Wechselrichter/ Diode Inverter VRRM 600 V IF 50 A IFRM 10... See More ⇒

 9.1. Size:503K  powersem
 psii50-06.pdf pdf_icon

SII50N06

IGBT Module IC80 = 48 A PSII 50/06* VCES = 600 V Preliminary Data Sheet VCE(sat)typ. = 2.3 V S15 R15 A15 G15 N15 ECO-TOPTM 1 A7 V12 V9 A9 V13 V10 D1 K1 Q1 A1 N1 G1 U1 V1 V3 V6 typical picture, for pin configuration see outline IGBTs drawing Symbol Conditions Maximum Ratings VCES TVJ = 25 C to 150 C 600 V *NTC optional VGES 20 V IC25 TC = 25 C 69 A IC80 TC = ... See More ⇒

Specs: SKM600GB126D , SII100N06 , SII100N12 , SII150N06 , SII150N12 , SII200N06 , SII200N12 , SII300N06 , IKW50N60T , SII75N06 , SII75N12 , MMIX1B15N300C , MMIX1B20N300C , MMIX1G120N120A3V1 , MMIX1X200N60B3 , MMIX1X200N60B3H1 , MMIX1X340N65B4 .

History: SII300N06

Keywords - SII50N06 transistor spec

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