All IGBT. RJP30H2A Datasheet

 

RJP30H2A Datasheet and Replacement


   Type Designator: RJP30H2A
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 60 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 360 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
   |Ic|ⓘ - Maximum Collector Current: 35 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.9 V @25℃
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 180 nS
   Coesⓘ - Output Capacitance, typ: 60 pF
   Qgⓘ - Total Gate Charge, typ: 37 nC
   Package: TO263
      - IGBT Cross-Reference

 

RJP30H2A Datasheet (PDF)

 ..1. Size:226K  renesas
 rjp30h2dpk-m0 rjp30h2a.pdf pdf_icon

RJP30H2A

Preliminary Datasheet RJP30H2DPK-M0 / RJP30H2A R07DS0467EJ0200Silicon N Channel IGBT Rev.2.00High speed power switching Jun 15, 2011Features Trench gate and thin wafer technology (G6H-II series) Low collector to emitter saturation voltage: VCE(sat) = 1.4 V typ High speed switching: tf = 100 ns typ, tf = 180 ns typ Low leak current: ICES = 1 A maxOutline

 7.1. Size:160K  renesas
 r07ds0467ej rjp30h2dpk.pdf pdf_icon

RJP30H2A

Preliminary Datasheet RJP30H2DPK-M0 R07DS0467EJ0200Silicon N Channel IGBT Rev.2.00High speed power switching Jun 15, 2011Features Trench gate and thin wafer technology (G6H-II series) Low collector to emitter saturation voltage: VCE(sat) = 1.4 V typ High speed switching: tf = 100 ns typ, tf = 180 ns typ Low leak current: ICES = 1 A max Outline RENES

 7.2. Size:129K  renesas
 rjp30h2dpk-m0.pdf pdf_icon

RJP30H2A

Preliminary Datasheet RJP30H2DPK-M0 R07DS0467EJ0200Silicon N Channel IGBT Rev.2.00High speed power switching Jun 15, 2011Features Trench gate and thin wafer technology (G6H-II series) Low collector to emitter saturation voltage: VCE(sat) = 1.4 V typ High speed switching: tf = 100 ns typ, tf = 180 ns typ Low leak current: ICES = 1 A max Outline RENES

 8.1. Size:130K  renesas
 rjp30h1dpd.pdf pdf_icon

RJP30H2A

Preliminary Datasheet RJP30H1DPD R07DS0465EJ0200Silicon N Channel IGBT Rev.2.00High speed power switching Jun 15, 2011Features Trench gate and thin wafer technology (G6H-II series) High speed switching: tr = 80 ns typ., tf = 150 ns typ. Low collector to emitter saturation voltage: VCE(sat) = 1.5 V typ. Low leak current: ICES = 1 A max. Outline RENES

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Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , GT30F131 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

Keywords - RJP30H2A transistor datasheet

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