All IGBT. RJP30H2A Datasheet

 

RJP30H2A Datasheet and Replacement


   Type Designator: RJP30H2A
   Type: IGBT
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 60 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 360 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
   |Ic| ⓘ - Maximum Collector Current: 35 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.9 V @25℃
   Tj ⓘ - Maximum Junction Temperature: 150 ℃
   tr ⓘ - Rise Time, typ: 180 nS
   Coesⓘ - Output Capacitance, typ: 60 pF
   Package: TO263
 

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RJP30H2A Datasheet (PDF)

 ..1. Size:226K  renesas
 rjp30h2dpk-m0 rjp30h2a.pdf pdf_icon

RJP30H2A

Preliminary Datasheet RJP30H2DPK-M0 / RJP30H2A R07DS0467EJ0200Silicon N Channel IGBT Rev.2.00High speed power switching Jun 15, 2011Features Trench gate and thin wafer technology (G6H-II series) Low collector to emitter saturation voltage: VCE(sat) = 1.4 V typ High speed switching: tf = 100 ns typ, tf = 180 ns typ Low leak current: ICES = 1 A maxOutline

 7.1. Size:160K  renesas
 r07ds0467ej rjp30h2dpk.pdf pdf_icon

RJP30H2A

Preliminary Datasheet RJP30H2DPK-M0 R07DS0467EJ0200Silicon N Channel IGBT Rev.2.00High speed power switching Jun 15, 2011Features Trench gate and thin wafer technology (G6H-II series) Low collector to emitter saturation voltage: VCE(sat) = 1.4 V typ High speed switching: tf = 100 ns typ, tf = 180 ns typ Low leak current: ICES = 1 A max Outline RENES

 7.2. Size:129K  renesas
 rjp30h2dpk-m0.pdf pdf_icon

RJP30H2A

Preliminary Datasheet RJP30H2DPK-M0 R07DS0467EJ0200Silicon N Channel IGBT Rev.2.00High speed power switching Jun 15, 2011Features Trench gate and thin wafer technology (G6H-II series) Low collector to emitter saturation voltage: VCE(sat) = 1.4 V typ High speed switching: tf = 100 ns typ, tf = 180 ns typ Low leak current: ICES = 1 A max Outline RENES

 8.1. Size:130K  renesas
 rjp30h1dpd.pdf pdf_icon

RJP30H2A

Preliminary Datasheet RJP30H1DPD R07DS0465EJ0200Silicon N Channel IGBT Rev.2.00High speed power switching Jun 15, 2011Features Trench gate and thin wafer technology (G6H-II series) High speed switching: tr = 80 ns typ., tf = 150 ns typ. Low collector to emitter saturation voltage: VCE(sat) = 1.5 V typ. Low leak current: ICES = 1 A max. Outline RENES

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Datasheet: IRGC100B120UB , IRGC100B60KB , IRGC100B60UB , IRGC15B120KB , IRGC15B120UB , IRGC16B120KB , IRGC16B60KB , GT50JR22 , IRGB20B60PD1 , FGA60N65SMD , FGA6065ADF , FGA6560WDF , FGH30S130P , GT40WR21 , FGM603 , FGT312 , FGT313 .

Keywords - RJP30H2A transistor datasheet

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