All IGBT. RJP30H2A Datasheet

 

RJP30H2A IGBT. Datasheet pdf. Equivalent


   Type Designator: RJP30H2A
   Type: IGBT
   Type of IGBT Channel: N
   Maximum Power Dissipation (Pc), W: 60
   Maximum Collector-Emitter Voltage |Vce|, V: 360
   Maximum Gate-Emitter Voltage |Vge|, V: 30
   Maximum Collector Current |Ic| @25℃, A: 35
   Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 1.9
   Maximum Junction Temperature (Tj), ℃: 150
   Rise Time (tr), typ, nS: 180
   Collector Capacity (Cc), typ, pF: 60
   Total Gate Charge (Qg), typ, nC: 37
   Package: TO263

 RJP30H2A Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

RJP30H2A Datasheet (PDF)

 ..1. Size:226K  renesas
rjp30h2dpk-m0 rjp30h2a.pdf

RJP30H2A RJP30H2A

Preliminary Datasheet RJP30H2DPK-M0 / RJP30H2A R07DS0467EJ0200Silicon N Channel IGBT Rev.2.00High speed power switching Jun 15, 2011Features Trench gate and thin wafer technology (G6H-II series) Low collector to emitter saturation voltage: VCE(sat) = 1.4 V typ High speed switching: tf = 100 ns typ, tf = 180 ns typ Low leak current: ICES = 1 A maxOutline

 7.1. Size:160K  renesas
r07ds0467ej rjp30h2dpk.pdf

RJP30H2A RJP30H2A

Preliminary Datasheet RJP30H2DPK-M0 R07DS0467EJ0200Silicon N Channel IGBT Rev.2.00High speed power switching Jun 15, 2011Features Trench gate and thin wafer technology (G6H-II series) Low collector to emitter saturation voltage: VCE(sat) = 1.4 V typ High speed switching: tf = 100 ns typ, tf = 180 ns typ Low leak current: ICES = 1 A max Outline RENES

 7.2. Size:129K  renesas
rjp30h2dpk-m0.pdf

RJP30H2A RJP30H2A

Preliminary Datasheet RJP30H2DPK-M0 R07DS0467EJ0200Silicon N Channel IGBT Rev.2.00High speed power switching Jun 15, 2011Features Trench gate and thin wafer technology (G6H-II series) Low collector to emitter saturation voltage: VCE(sat) = 1.4 V typ High speed switching: tf = 100 ns typ, tf = 180 ns typ Low leak current: ICES = 1 A max Outline RENES

 8.1. Size:130K  renesas
rjp30h1dpd.pdf

RJP30H2A RJP30H2A

Preliminary Datasheet RJP30H1DPD R07DS0465EJ0200Silicon N Channel IGBT Rev.2.00High speed power switching Jun 15, 2011Features Trench gate and thin wafer technology (G6H-II series) High speed switching: tr = 80 ns typ., tf = 150 ns typ. Low collector to emitter saturation voltage: VCE(sat) = 1.5 V typ. Low leak current: ICES = 1 A max. Outline RENES

 8.2. Size:151K  renesas
r07ds0466ej rjp30h1dpp.pdf

RJP30H2A RJP30H2A

Preliminary Datasheet RJP30H1DPP-M0 R07DS0466EJ0200Silicon N Channel IGBT Rev.2.00High speed power switching Jun 15, 2011Features Trench gate and thin wafer technology (G6H-II series) High speed switching: tr =80 ns typ., tf = 150 ns typ. Low collector to emitter saturation voltage: VCE(sat)= 1.5 V typ. Low leak current: ICES = 1 A max. Isolated p

 8.3. Size:151K  renesas
r07ds0465ej rjp30h1dpd.pdf

RJP30H2A RJP30H2A

Preliminary Datasheet RJP30H1DPD R07DS0465EJ0200Silicon N Channel IGBT Rev.2.00High speed power switching Jun 15, 2011Features Trench gate and thin wafer technology (G6H-II series) High speed switching: tr = 80 ns typ., tf = 150 ns typ. Low collector to emitter saturation voltage: VCE(sat) = 1.5 V typ. Low leak current: ICES = 1 A max. Outline RENES

 8.4. Size:130K  renesas
rjp30h1dpp-m0.pdf

RJP30H2A RJP30H2A

Preliminary Datasheet RJP30H1DPP-M0 R07DS0466EJ0200Silicon N Channel IGBT Rev.2.00High speed power switching Jun 15, 2011Features Trench gate and thin wafer technology (G6H-II series) High speed switching: tr =80 ns typ., tf = 150 ns typ. Low collector to emitter saturation voltage: VCE(sat)= 1.5 V typ. Low leak current: ICES = 1 A max. Isolated p

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