All IGBT. RJP30H2A Datasheet

 

RJP30H2A IGBT. Datasheet pdf. Equivalent

Type Designator: RJP30H2A

Type of IGBT Channel: N-Channel

Maximum Power Dissipation (Pc), W: 60

Maximum Collector-Emitter Voltage |Vce|, V: 360

Collector-Emitter saturation Voltage |Vcesat|, V: 1.9

Maximum Gate-Emitter Voltage |Veg|, V: 30

Maximum Collector Current |Ic|, A: 35

Maximum Junction Temperature (Tj), °C: 150

Rise Time, nS: 180

Maximum Collector Capacity (Cc), pF: 60

Package: TO263

RJP30H2A Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

RJP30H2A Datasheet (PDF)

..1. rjp30h2dpk-m0 rjp30h2a.pdf Size:226K _renesas

RJP30H2A
RJP30H2A

Preliminary Datasheet RJP30H2DPK-M0 / RJP30H2A R07DS0467EJ0200Silicon N Channel IGBT Rev.2.00High speed power switching Jun 15, 2011Features Trench gate and thin wafer technology (G6H-II series) Low collector to emitter saturation voltage: VCE(sat) = 1.4 V typ High speed switching: tf = 100 ns typ, tf = 180 ns typ Low leak current: ICES = 1 A maxOutline

7.1. rjp30h2dpk-m0.pdf Size:129K _renesas

RJP30H2A
RJP30H2A

Preliminary Datasheet RJP30H2DPK-M0 R07DS0467EJ0200Silicon N Channel IGBT Rev.2.00High speed power switching Jun 15, 2011Features Trench gate and thin wafer technology (G6H-II series) Low collector to emitter saturation voltage: VCE(sat) = 1.4 V typ High speed switching: tf = 100 ns typ, tf = 180 ns typ Low leak current: ICES = 1 A max Outline RENES

7.2. r07ds0467ej rjp30h2dpk.pdf Size:160K _renesas

RJP30H2A
RJP30H2A

Preliminary Datasheet RJP30H2DPK-M0 R07DS0467EJ0200Silicon N Channel IGBT Rev.2.00High speed power switching Jun 15, 2011Features Trench gate and thin wafer technology (G6H-II series) Low collector to emitter saturation voltage: VCE(sat) = 1.4 V typ High speed switching: tf = 100 ns typ, tf = 180 ns typ Low leak current: ICES = 1 A max Outline RENES

 8.1. r07ds0466ej rjp30h1dpp.pdf Size:151K _renesas

RJP30H2A
RJP30H2A

Preliminary Datasheet RJP30H1DPP-M0 R07DS0466EJ0200Silicon N Channel IGBT Rev.2.00High speed power switching Jun 15, 2011Features Trench gate and thin wafer technology (G6H-II series) High speed switching: tr =80 ns typ., tf = 150 ns typ. Low collector to emitter saturation voltage: VCE(sat)= 1.5 V typ. Low leak current: ICES = 1 A max. Isolated p

8.2. rjp30h1dpp-m0.pdf Size:130K _renesas

RJP30H2A
RJP30H2A

Preliminary Datasheet RJP30H1DPP-M0 R07DS0466EJ0200Silicon N Channel IGBT Rev.2.00High speed power switching Jun 15, 2011Features Trench gate and thin wafer technology (G6H-II series) High speed switching: tr =80 ns typ., tf = 150 ns typ. Low collector to emitter saturation voltage: VCE(sat)= 1.5 V typ. Low leak current: ICES = 1 A max. Isolated p

 8.3. r07ds0465ej rjp30h1dpd.pdf Size:151K _renesas

RJP30H2A
RJP30H2A

Preliminary Datasheet RJP30H1DPD R07DS0465EJ0200Silicon N Channel IGBT Rev.2.00High speed power switching Jun 15, 2011Features Trench gate and thin wafer technology (G6H-II series) High speed switching: tr = 80 ns typ., tf = 150 ns typ. Low collector to emitter saturation voltage: VCE(sat) = 1.5 V typ. Low leak current: ICES = 1 A max. Outline RENES

8.4. rjp30h1dpd.pdf Size:130K _renesas

RJP30H2A
RJP30H2A

Preliminary Datasheet RJP30H1DPD R07DS0465EJ0200Silicon N Channel IGBT Rev.2.00High speed power switching Jun 15, 2011Features Trench gate and thin wafer technology (G6H-II series) High speed switching: tr = 80 ns typ., tf = 150 ns typ. Low collector to emitter saturation voltage: VCE(sat) = 1.5 V typ. Low leak current: ICES = 1 A max. Outline RENES

Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , IRGP4068D , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

 

 
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