All IGBT. GT40WR21 Datasheet

 

GT40WR21 Datasheet and Replacement


   Type Designator: GT40WR21
   Type: IGBT
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 375 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1800 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 25 V
   |Ic| ⓘ - Maximum Collector Current: 40 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 5.9 V @25℃
   Tj ⓘ - Maximum Junction Temperature: 175 ℃
   tr ⓘ - Rise Time, typ: 400 nS
   Package: TO-3PN

 GT40WR21 Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

GT40WR21 Datasheet (PDF)

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GT40WR21

GT40WR21 Discrete IGBTs Silicon N-Channel IGBT GT40WR21 GT40WR21 GT40WR21 GT40WR21 1. Applications (Note) 1. Applications (Note) 1. Applications (Note) 1. Applications (Note) Dedicated to Voltage-Resonant Inverter Switching Applications Note The product(s) described herein should not be used for any other application. 2. Features 2. Features 2. Features 2. Features (1) 6.5t... See More ⇒

Datasheet: IRGC16B120KB , IRGC16B60KB , GT50JR22 , RJP30H2A , FGA60N65SMD , FGA6065ADF , FGA6560WDF , FGH30S130P , FGL60N100BNTD , FGM603 , FGT312 , FGT313 , FGT412 , FGT612 , 2PG001 , IKW30N65WR5 , MGD633 .

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