All IGBT. GT40WR21 Datasheet

 

GT40WR21 IGBT. Datasheet pdf. Equivalent


   Type Designator: GT40WR21
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 375 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1800 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 25 V
   |Ic|ⓘ - Maximum Collector Current: 40 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 5.9 V @25℃
   Tjⓘ - Maximum Junction Temperature: 175 ℃
   trⓘ - Rise Time, typ: 400 nS
   Package: TO-3PN

 GT40WR21 Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

GT40WR21 Datasheet (PDF)

 ..1. Size:381K  toshiba
 gt40wr21.pdf

GT40WR21 GT40WR21

GT40WR21Discrete IGBTs Silicon N-Channel IGBTGT40WR21GT40WR21GT40WR21GT40WR211. Applications (Note)1. Applications (Note)1. Applications (Note)1. Applications (Note) Dedicated to Voltage-Resonant Inverter Switching ApplicationsNote: The product(s) described herein should not be used for any other application.2. Features2. Features2. Features2. Features(1) 6.5t

Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , CRG60T60AK3HD , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

 

 
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