GT40WR21 Datasheet. Specs and Replacement

Type Designator: GT40WR21  📄📄 

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 375 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1800 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 25 V

|Ic| ⓘ - Maximum Collector Current: 40 A @25℃

Tj ⓘ - Maximum Junction Temperature: 175 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 5.9 V @25℃

tr ⓘ - Rise Time, typ: 400 nS

Package: TO-3PN

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GT40WR21 datasheet

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GT40WR21

GT40WR21 Discrete IGBTs Silicon N-Channel IGBT GT40WR21 GT40WR21 GT40WR21 GT40WR21 1. Applications (Note) 1. Applications (Note) 1. Applications (Note) 1. Applications (Note) Dedicated to Voltage-Resonant Inverter Switching Applications Note The product(s) described herein should not be used for any other application. 2. Features 2. Features 2. Features 2. Features (1) 6.5t... See More ⇒

Specs: IRGC16B120KB, IRGC16B60KB, GT50JR22, RJP30H2A, FGA60N65SMD, FGA6065ADF, FGA6560WDF, FGH30S130P, GT30F133, FGM603, FGT312, FGT313, FGT412, FGT612, 2PG001, IKW30N65WR5, MGD633

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