GT40WR21 Datasheet and Replacement
Type Designator: GT40WR21
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 375 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1800 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 25 V
|Ic|ⓘ - Maximum Collector Current: 40 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 5.9 V @25℃
Tjⓘ - Maximum Junction Temperature: 175 ℃
trⓘ - Rise Time, typ: 400 nS
Package: TO-3PN
- IGBT Cross-Reference
GT40WR21 Datasheet (PDF)
gt40wr21.pdf

GT40WR21Discrete IGBTs Silicon N-Channel IGBTGT40WR21GT40WR21GT40WR21GT40WR211. Applications (Note)1. Applications (Note)1. Applications (Note)1. Applications (Note) Dedicated to Voltage-Resonant Inverter Switching ApplicationsNote: The product(s) described herein should not be used for any other application.2. Features2. Features2. Features2. Features(1) 6.5t
Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , GT30F131 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .
History: MWI60-06G6K | FGW30N120H
Keywords - GT40WR21 transistor datasheet
GT40WR21 cross reference
GT40WR21 equivalent finder
GT40WR21 lookup
GT40WR21 substitution
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History: MWI60-06G6K | FGW30N120H



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