MBQ40T120FES Datasheet. Specs and Replacement

Type Designator: MBQ40T120FES  📄📄 

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 357 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 80 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.4 V @25℃

tr ⓘ - Rise Time, typ: 55 nS

Coesⓘ - Output Capacitance, typ: 206 pF

Package: TO247

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MBQ40T120FES datasheet

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MBQ40T120FES

MBQ40T120FES High speed FieldStop Trench IGBT Features General Description High Speed Switching & Low Power Loss This IGBT is produced using advanced MagnaChip s Field V = 2.0V @ I = 40A Stop Trench IGBT Technology, which provides low V , CE(sat) C CE(SAT) high switching performance and excellent quality. High Input Impedance trr = 100ns (typ.) This de... See More ⇒

 4.1. Size:1272K  1
 mbq40t120fds.pdf pdf_icon

MBQ40T120FES

MBQ40T120FDS High speed FieldStop Trench IGBT General Description Features High Speed Switching & Low Power Loss This IGBT is produced using advanced MagnaChip s Field VCE(sat) = 2.0V @ IC = 40A Stop Trench IGBT Technology, which provides low V , CE(SAT) High Input Impedance high switching performance and excellent quality. t = 100ns (typ.) rr This de... See More ⇒

 8.1. Size:711K  1
 mbq40t65qes.pdf pdf_icon

MBQ40T120FES

MBQ40T65QES 650V Field Stop IGBT Features General Description High Speed Switching & Low Power Loss This IGBT is produced using advanced Magnachip s Field V = 1.8V @ I = 40A CE(sat) C Stop Trench IGBT Technology, which provides high switching Maximum junction temperature 175 C speed and excellent quality. Applications Inverters Welding convert... See More ⇒

 8.2. Size:1591K  1
 mbq40t65fdsc.pdf pdf_icon

MBQ40T120FES

MBQ40T65FDSC 650V Field Stop IGBT General Description Features High Speed Switching & Low Power Loss This IGBT is produced using advanced MagnaChip s Field V CE(sat) = 1.95V @ I C = 40A Stop Trench IGBT Technology, which provides high switching E = 0.35mJ @ T = 25 C off C series and excellent quality. High Input Impedance t = 80ns (typ.) @di /dt = 1000... See More ⇒

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Specs: FGT312, FGT313, FGT412, FGT612, 2PG001, IKW30N65WR5, MGD633, GT20D201, IRG4PC40W, GT40RR21, MBQ50T65FESC, MBQ60T65PES, JNG25N120HS, SSG60N60N, PDMB100E6, SL40N60FL, MBQ50T65FDSC

Keywords - MBQ40T120FES transistor spec

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