All IGBT. MBQ40T120FES Datasheet

 

MBQ40T120FES IGBT. Datasheet pdf. Equivalent


   Type Designator: MBQ40T120FES
   Type: IGBT + Anti-Parallel Diode
   Marking Code: 40T120FES
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 357 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 80 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.4 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.5 V
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 55 nS
   Coesⓘ - Output Capacitance, typ: 206 pF
   Qgⓘ - Total Gate Charge, typ: 341 nC
   Package: TO247

 MBQ40T120FES Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

MBQ40T120FES Datasheet (PDF)

 ..1. Size:1275K  magnachip
 mbq40t120fes.pdf

MBQ40T120FES MBQ40T120FES

MBQ40T120FES High speed FieldStop Trench IGBT Features General Description High Speed Switching & Low Power Loss This IGBT is produced using advanced MagnaChips Field V = 2.0V @ I = 40A Stop Trench IGBT Technology, which provides low V , CE(sat) C CE(SAT)high switching performance and excellent quality. High Input Impedance trr = 100ns (typ.) This de

 4.1. Size:1272K  1
 mbq40t120fds.pdf

MBQ40T120FES MBQ40T120FES

MBQ40T120FDS High speed FieldStop Trench IGBT General Description Features High Speed Switching & Low Power Loss This IGBT is produced using advanced MagnaChips Field VCE(sat) = 2.0V @ IC = 40A Stop Trench IGBT Technology, which provides low V , CE(SAT) High Input Impedance high switching performance and excellent quality. t = 100ns (typ.) rrThis de

 8.1. Size:711K  1
 mbq40t65qes.pdf

MBQ40T120FES MBQ40T120FES

MBQ40T65QES 650V Field Stop IGBT Features General Description High Speed Switching & Low Power Loss This IGBT is produced using advanced Magnachips Field V = 1.8V @ I = 40A CE(sat) C Stop Trench IGBT Technology, which provides high switching Maximum junction temperature 175C speed and excellent quality. Applications Inverters Welding convert

 8.2. Size:1591K  1
 mbq40t65fdsc.pdf

MBQ40T120FES MBQ40T120FES

MBQ40T65FDSC650V Field Stop IGBTGeneral Description Features High Speed Switching & Low Power Loss This IGBT is produced using advanced MagnaChips Field V CE(sat) = 1.95V @ I C = 40A Stop Trench IGBT Technology, which provides high switching E = 0.35mJ @ T = 25C off C series and excellent quality. High Input Impedance t = 80ns (typ.) @di /dt = 1000

Datasheet: FGT312 , FGT313 , FGT412 , FGT612 , 2PG001 , IKW30N65WR5 , MGD633 , GT20D201 , IXRH40N120 , GT40RR21 , MBQ50T65FESC , MBQ60T65PES , JNG25N120HS , SSG60N60N , PDMB100E6 , SL40N60FL , MBQ50T65FDSC .

 

 
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