All IGBT. MBQ40T120FES Datasheet


MBQ40T120FES IGBT. Datasheet pdf. Equivalent

Type Designator: MBQ40T120FES

Marking Code: 40T120FES

Type of IGBT Channel: N-Channel

Maximum Power Dissipation (Pc), W: 357

Maximum Collector-Emitter Voltage |Vce|, V: 1200

Collector-Emitter saturation Voltage |Vcesat|, V: 2.4

Maximum Gate-Emitter Voltage |Veg|, V: 20

Maximum Collector Current |Ic|, A: 80

Maximum Junction Temperature (Tj), °C: 150

Rise Time, nS: 55

Maximum Collector Capacity (Cc), pF: 206

Package: TO247

MBQ40T120FES Transistor Equivalent Substitute - IGBT Cross-Reference Search


MBQ40T120FES Datasheet (PDF)

1.1. mbq40t120fes.pdf Size:1275K _update_igbt


 MBQ40T120FES High speed FieldStop Trench IGBT Features General Description  High Speed Switching & Low Power Loss This IGBT is produced using advanced MagnaChip’s Field  V = 2.0V @ I = 40A Stop Trench IGBT Technology, which provides low V , CE(sat) C CE(SAT) high switching performance and excellent quality.  High Input Impedance  trr = 100ns (typ.) This de

Datasheet: FGT312 , FGT313 , FGT412 , FGT612 , 2PG001 , IKW30N65WR5 , MGD633 , GT20D201 , STGW20NC60VD , GT40RR21 , MBQ50T65FESC , MBQ60T65PES , JNG25N120HS , SSG60N60N , PDMB100E6 , SL40N60FL , MBQ50T65FDSC .


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