MBQ40T120FES datasheet, аналоги, основные параметры

Наименование: MBQ40T120FES  📄📄 

Тип транзистора: IGBT

Тип управляющего канала: N

Предельные значения

Pc ⓘ - Максимальная рассеиваемая мощность: 357 W

|Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 1200 V

|Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V

|Ic| ⓘ - Максимальный постоянный ток коллектора: 80 A @25℃

Tj ⓘ - Максимальная температура перехода: 150 ℃

Электрические характеристики

|VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 2.4 V @25℃

tr ⓘ - Время нарастания типовое: 55 nS

Coesⓘ - Выходная емкость, типовая: 206 pF

Тип корпуса: TO247

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 Аналог (замена) для MBQ40T120FES

- подбор ⓘ IGBT транзистора по параметрам

 

MBQ40T120FES даташит

 ..1. Size:1275K  magnachip
 mbq40t120fes.pdf pdf_icon

MBQ40T120FES

MBQ40T120FES High speed FieldStop Trench IGBT Features General Description High Speed Switching & Low Power Loss This IGBT is produced using advanced MagnaChip s Field V = 2.0V @ I = 40A Stop Trench IGBT Technology, which provides low V , CE(sat) C CE(SAT) high switching performance and excellent quality. High Input Impedance trr = 100ns (typ.) This de

 4.1. Size:1272K  1
 mbq40t120fds.pdf pdf_icon

MBQ40T120FES

MBQ40T120FDS High speed FieldStop Trench IGBT General Description Features High Speed Switching & Low Power Loss This IGBT is produced using advanced MagnaChip s Field VCE(sat) = 2.0V @ IC = 40A Stop Trench IGBT Technology, which provides low V , CE(SAT) High Input Impedance high switching performance and excellent quality. t = 100ns (typ.) rr This de

 8.1. Size:711K  1
 mbq40t65qes.pdf pdf_icon

MBQ40T120FES

MBQ40T65QES 650V Field Stop IGBT Features General Description High Speed Switching & Low Power Loss This IGBT is produced using advanced Magnachip s Field V = 1.8V @ I = 40A CE(sat) C Stop Trench IGBT Technology, which provides high switching Maximum junction temperature 175 C speed and excellent quality. Applications Inverters Welding convert

 8.2. Size:1591K  1
 mbq40t65fdsc.pdf pdf_icon

MBQ40T120FES

MBQ40T65FDSC 650V Field Stop IGBT General Description Features High Speed Switching & Low Power Loss This IGBT is produced using advanced MagnaChip s Field V CE(sat) = 1.95V @ I C = 40A Stop Trench IGBT Technology, which provides high switching E = 0.35mJ @ T = 25 C off C series and excellent quality. High Input Impedance t = 80ns (typ.) @di /dt = 1000

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