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AOT15B65M1 Spec and Replacement


   Type Designator: AOT15B65M1
   Type: IGBT
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 214 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
   |Ic| ⓘ - Maximum Collector Current: 30 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.7 V @25℃
   Tj ⓘ - Maximum Junction Temperature: 175 ℃
   tr ⓘ - Rise Time, typ: 18 nS
   Coesⓘ - Output Capacitance, typ: 96 pF
   Package: TO220

 AOT15B65M1 Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

AOT15B65M1 specs

 ..1. Size:556K  aosemi
aot15b65m1 aob15b65m1.pdf pdf_icon

AOT15B65M1

AOT15B65M1/AOB15B65M1 TM 650V, 15A Alpha IGBT With soft and fast recovery anti-parallel diode General Description Product Summary VCE Latest AlphaIGBT ( IGBT) technology 650V 650V breakdown voltage IC (TC=100 C) 15A Very fast and soft recovery freewheeling diode VCE(sat) (TJ=25 C) 1.7V High efficient turn-on di/dt controllability Low VCE(SAT) enables high eff... See More ⇒

 ..2. Size:1328K  aosemi
aot15b65m1.pdf pdf_icon

AOT15B65M1

AOT15B65M1/AOB15B65M1 TM 650V, 15A Alpha IGBT With soft and fast recovery anti-parallel diode General Description Product Summary VCE Latest AlphaIGBT ( IGBT) technology 650V 650V breakdown voltage IC (TC=100 C) 15A Very fast and soft recovery freewheeling diode VCE(sat) (TJ=25 C) 1.7V High efficient turn-on di/dt controllability Low VCE(SAT) enables high eff... See More ⇒

 5.1. Size:654K  aosemi
aot15b65mq1.pdf pdf_icon

AOT15B65M1

AOT15B65MQ1/AOB15B65MQ1 TM 650V, 15A AlphaIGBT With Soft and Fast Recovery Anti-Parallel Diode General Description Product Summary VCE Latest AlphaIGBT ( IGBT) technology 650V 650V breakdown voltage IC (TC=100 15A C) Very fast and soft recovery freewheeling diode VCE(sat) (TJ=25 1.7V C) High efficient turn-on di/dt controllability Low VCE(sat) enables hig... See More ⇒

 5.2. Size:553K  aosemi
aot15b65m3.pdf pdf_icon

AOT15B65M1

AOT15B65M3 TM 650V, 15A Alpha IGBT With soft and fast recovery anti-parallel diode General Description Product Summary VCE Latest AlphaIGBT ( IGBT) Technology 650V 650V Breakdown voltage IC (TC=100 15A C) Very fast and soft recovery freewheeling diode VCE(sat) (TJ=25 1.95V C) High efficient Turn-On di/dt controllability Low VCE(sat) enables high efficienci... See More ⇒

Specs: PDMB100E6 , SL40N60FL , MBQ50T65FDSC , STGW38IH120D , FGH75T65UPD , STGB7NC60KD , STGF7NC60KD , STGP7NC60KD , FGH40N60UFD , AOB15B65M1 , GT60M104 , FGB40N60SM , IHW20N120R2 , 1MBI100U4F-120L-50 , 1MBI1200U4C-120 , 1MBI1200U4C-170 , 1MBI1200UE-330 .

Keywords - AOT15B65M1 transistor spec

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