All IGBT. AOT15B65M1 Datasheet

 

AOT15B65M1 IGBT. Datasheet pdf. Equivalent

Type Designator: AOT15B65M1

Type of IGBT Channel: N-Channel

Maximum Power Dissipation (Pc), W: 214

Maximum Collector-Emitter Voltage |Vce|, V: 650

Collector-Emitter saturation Voltage |Vcesat|, V: 1.7

Maximum Gate-Emitter Voltage |Veg|, V: 30

Maximum Collector Current |Ic|, A: 30

Maximum Junction Temperature (Tj), °C: 175

Rise Time, nS: 18

Maximum Collector Capacity (Cc), pF: 96

Package: TO220

AOT15B65M1 Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

AOT15B65M1 Datasheet (PDF)

1.1. aot15b65m1 aob15b65m1.pdf Size:556K _update_igbt

AOT15B65M1
AOT15B65M1

AOT15B65M1/AOB15B65M1 TM 650V, 15A Alpha IGBT With soft and fast recovery anti-parallel diode General Description Product Summary VCE • Latest AlphaIGBT (α IGBT) technology 650V • 650V breakdown voltage IC (TC=100°C) 15A • Very fast and soft recovery freewheeling diode VCE(sat) (TJ=25°C) 1.7V • High efficient turn-on di/dt controllability • Low VCE(SAT) enables high eff

3.1. aot15b60d.pdf Size:671K _aosemi

AOT15B65M1
AOT15B65M1

AOT15B60D TM 600V, 15A Alpha IGBT with Diode General Description Product Summary VCE 600V The Alpha IGBTTM line of products offers best-in-class IC (TC=100°C) 15A performance in conduction and switching losses, with robust short circuit capability. They are designed for ease VCE(sat) (TC=25°C) 1.6V of paralleling, minimal gate spike under high dV/dt conditions and resistance to

 5.1. aot15s65l.pdf Size:302K _aosemi

AOT15B65M1
AOT15B65M1

AOT15S65/AOB15S65/AOTF15S65 TM 650V 15A α MOS Power Transistor α α α General Description Product Summary VDS @ Tj,max 750V The AOT15S65 & AOB15S65 & AOTF15S65 have been fabricated using the advanced αMOSTM high voltage IDM 60A process that is designed to deliver high levels of RDS(ON),max 0.29Ω performance and robustness in switching applications. Qg,typ 17.2nC By provid

5.2. aot15s60.pdf Size:343K _aosemi

AOT15B65M1
AOT15B65M1

AOT15S60/AOB15S60/AOTF15S60 TM 600V 15A α MOS Power Transistor α α α General Description Product Summary VDS @ Tj,max 700V The AOT15S60& AOB15S60 & AOTF15S60 have been fabricated using the advanced αMOSTM high voltage IDM 63A process that is designed to deliver high levels of RDS(ON),max 0.29Ω performance and robustness in switching applications. Qg,typ 16nC By providing

 5.3. aot15s65.pdf Size:302K _aosemi

AOT15B65M1
AOT15B65M1

AOT15S65/AOB15S65/AOTF15S65 TM 650V 15A α MOS Power Transistor α α α General Description Product Summary VDS @ Tj,max 750V The AOT15S65 & AOB15S65 & AOTF15S65 have been fabricated using the advanced αMOSTM high voltage IDM 60A process that is designed to deliver high levels of RDS(ON),max 0.29Ω performance and robustness in switching applications. Qg,typ 17.2nC By provid

5.4. aot15s60l.pdf Size:343K _aosemi

AOT15B65M1
AOT15B65M1

AOT15S60/AOB15S60/AOTF15S60 TM 600V 15A α MOS Power Transistor α α α General Description Product Summary VDS @ Tj,max 700V The AOT15S60& AOB15S60 & AOTF15S60 have been fabricated using the advanced αMOSTM high voltage IDM 63A process that is designed to deliver high levels of RDS(ON),max 0.29Ω performance and robustness in switching applications. Qg,typ 16nC By providing

Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , 1MBH50D-060 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

 

 
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