All IGBT. AOT15B65M1 Datasheet

 

AOT15B65M1 Datasheet and Replacement


   Type Designator: AOT15B65M1
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 214 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
   |Ic|ⓘ - Maximum Collector Current: 30 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.7 V @25℃
   Tjⓘ - Maximum Junction Temperature: 175 ℃
   trⓘ - Rise Time, typ: 18 nS
   Coesⓘ - Output Capacitance, typ: 96 pF
   Package: TO220
      - IGBT Cross-Reference

 

AOT15B65M1 Datasheet (PDF)

 ..1. Size:556K  aosemi
 aot15b65m1 aob15b65m1.pdf pdf_icon

AOT15B65M1

AOT15B65M1/AOB15B65M1TM650V, 15A Alpha IGBTWith soft and fast recovery anti-parallel diodeGeneral Description Product SummaryVCE Latest AlphaIGBT ( IGBT) technology 650V 650V breakdown voltageIC (TC=100C) 15A Very fast and soft recovery freewheeling diodeVCE(sat) (TJ=25C) 1.7V High efficient turn-on di/dt controllability Low VCE(SAT) enables high eff

 ..2. Size:1328K  aosemi
 aot15b65m1.pdf pdf_icon

AOT15B65M1

AOT15B65M1/AOB15B65M1TM650V, 15A Alpha IGBTWith soft and fast recovery anti-parallel diodeGeneral Description Product SummaryVCE Latest AlphaIGBT ( IGBT) technology 650V 650V breakdown voltageIC (TC=100C) 15A Very fast and soft recovery freewheeling diodeVCE(sat) (TJ=25C) 1.7V High efficient turn-on di/dt controllability Low VCE(SAT) enables high eff

 5.1. Size:654K  aosemi
 aot15b65mq1.pdf pdf_icon

AOT15B65M1

AOT15B65MQ1/AOB15B65MQ1TM 650V, 15A AlphaIGBTWith Soft and Fast Recovery Anti-Parallel DiodeGeneral Description Product SummaryVCE Latest AlphaIGBT (IGBT) technology 650V 650V breakdown voltageIC (TC=100 15AC) Very fast and soft recovery freewheeling diodeVCE(sat) (TJ=25 1.7VC) High efficient turn-on di/dt controllability Low VCE(sat) enables hig

 5.2. Size:553K  aosemi
 aot15b65m3.pdf pdf_icon

AOT15B65M1

AOT15B65M3TM650V, 15A Alpha IGBTWith soft and fast recovery anti-parallel diodeGeneral Description Product SummaryVCE Latest AlphaIGBT (IGBT) Technology 650V 650V Breakdown voltageIC (TC=100 15AC) Very fast and soft recovery freewheeling diodeVCE(sat) (TJ=25 1.95VC) High efficient Turn-On di/dt controllability Low VCE(sat) enables high efficienci

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History: IRGC16B60KB

Keywords - AOT15B65M1 transistor datasheet

 AOT15B65M1 cross reference
 AOT15B65M1 equivalent finder
 AOT15B65M1 lookup
 AOT15B65M1 substitution
 AOT15B65M1 replacement

 

 
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