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GT60M104 Spec and Replacement


   Type Designator: GT60M104
   Type: IGBT
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 200 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 900 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 25 V
   |Ic| ⓘ - Maximum Collector Current: 60 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.4 V @25℃
   Tj ⓘ - Maximum Junction Temperature: 150 ℃
   tr ⓘ - Rise Time, typ: 250 nS
   Package: 2-21F2C

 GT60M104 Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

GT60M104 specs

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GT60M104

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Specs: MBQ50T65FDSC , STGW38IH120D , FGH75T65UPD , STGB7NC60KD , STGF7NC60KD , STGP7NC60KD , AOT15B65M1 , AOB15B65M1 , FGH40N60SFD , FGB40N60SM , IHW20N120R2 , 1MBI100U4F-120L-50 , 1MBI1200U4C-120 , 1MBI1200U4C-170 , 1MBI1200UE-330 , 1MBI1500UE-330-02 , 1MBI150NH-060 .

Keywords - GT60M104 transistor spec

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