All IGBT. GT60M104 Datasheet

 

GT60M104 Datasheet and Replacement


   Type Designator: GT60M104
   Type: IGBT
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 200 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 900 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 25 V
   |Ic| ⓘ - Maximum Collector Current: 60 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.4 V @25℃
   Tj ⓘ - Maximum Junction Temperature: 150 ℃
   tr ⓘ - Rise Time, typ: 250 nS
   Package: 2-21F2C
 

 GT60M104 substitution

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GT60M104 Datasheet (PDF)

 ..1. Size:248K  toshiba
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GT60M104

 7.1. Size:142K  toshiba
 gt60m101.pdf pdf_icon

GT60M104

 7.2. Size:287K  toshiba
 gt50q101 gt50t101 gt60j101 gt60m102 gt60m103 gt75g101.pdf pdf_icon

GT60M104

 9.1. Size:297K  toshiba
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GT60M104

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Datasheet: MBQ50T65FDSC , STGW38IH120D , FGH75T65UPD , STGB7NC60KD , STGF7NC60KD , STGP7NC60KD , AOT15B65M1 , AOB15B65M1 , GT50JR22 , FGB40N60SM , IHW20N120R2 , 1MBI100U4F-120L-50 , 1MBI1200U4C-120 , 1MBI1200U4C-170 , 1MBI1200UE-330 , 1MBI1500UE-330-02 , 1MBI150NH-060 .

History: FGD4536 | 7MBR20SA060 | CRG60T60AK3HD

Keywords - GT60M104 transistor datasheet

 GT60M104 cross reference
 GT60M104 equivalent finder
 GT60M104 lookup
 GT60M104 substitution
 GT60M104 replacement

 

 
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