GT60M104 Datasheet and Replacement
Type Designator: GT60M104
Type: IGBT
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 200 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 900 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 25 V
|Ic|ⓘ - Maximum Collector Current: 60 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.4 V @25℃
Tjⓘ - Maximum Junction Temperature: 150 ℃
trⓘ - Rise Time, typ: 250 nS
Package: 2-21F2C
- IGBT Cross-Reference
GT60M104 Datasheet (PDF)
Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , GT30F131 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .
History: MWI60-06G6K | FGW30N120H
Keywords - GT60M104 transistor datasheet
GT60M104 cross reference
GT60M104 equivalent finder
GT60M104 lookup
GT60M104 substitution
GT60M104 replacement
History: MWI60-06G6K | FGW30N120H
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