All IGBT. GT60M104 Datasheet

 

GT60M104 Datasheet and Replacement


   Type Designator: GT60M104
   Type: IGBT
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 200 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 900 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 25 V
   |Ic| ⓘ - Maximum Collector Current: 60 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.4 V @25℃
   Tj ⓘ - Maximum Junction Temperature: 150 ℃
   tr ⓘ - Rise Time, typ: 250 nS
   Package: 2-21F2C
 

 GT60M104 substitution

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GT60M104 Datasheet (PDF)

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GT60M104

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GT60M104

 7.2. Size:287K  toshiba
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GT60M104

 9.1. Size:297K  toshiba
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GT60M104

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Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , IKW30N60H3 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

History: F4-150R12KS4 | IRGS4607D | MMG200DR120DE | CPV363M4KPBF

Keywords - GT60M104 transistor datasheet

 GT60M104 cross reference
 GT60M104 equivalent finder
 GT60M104 lookup
 GT60M104 substitution
 GT60M104 replacement

 

 
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