GT60M104 Datasheet. Specs and Replacement
Type Designator: GT60M104 📄📄
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 200 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 900 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 25 V
|Ic| ⓘ - Maximum Collector Current: 60 A @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.4 V @25℃
Package: 2-21F2C
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GT60M104 Substitution
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GT60M104 datasheet
Specs: MBQ50T65FDSC, STGW38IH120D, FGH75T65UPD, STGB7NC60KD, STGF7NC60KD, STGP7NC60KD, AOT15B65M1, AOB15B65M1, MBQ60T65PES, FGB40N60SM, IHW20N120R2, 1MBI100U4F-120L-50, 1MBI1200U4C-120, 1MBI1200U4C-170, 1MBI1200UE-330, 1MBI1500UE-330-02, 1MBI150NH-060
Keywords - GT60M104 transistor spec
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History: MMG75W120XB6TN
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