1MBI300F-120 Datasheet and Replacement
Type Designator: 1MBI300F-120
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Pc ⓘ - Maximum Power Dissipation: 1800 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 300 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.5 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 6 V
Tj ⓘ - Maximum Junction Temperature: 150 ℃
tr ⓘ - Rise Time, typ: 600 nS
Package: MODULE
1MBI300F-120 substitution
1MBI300F-120 Datasheet (PDF)
1mbi300f-120.pdf

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1mbi300f-060.pdf

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1mbi300nn-120.pdf

IGBT MODULE ( N series ) n Outline Drawingnn Featuresn Square RBSOA Low Saturation Voltage Less Total Power Dissipation Improved FWD Characteristic Minimized Internal Stray Inductance Overcurrent Limiting Function (4~5 Times Rated Current)n Applicationsn High Power Switching A.C. Motor Controls D.C. Motor Controls Uninterruptible Power
1mbi300hh-120l-50.pdf

http://www.fujielectric.com/products/semiconductor/1MBI300HH-120L-50 IGBT ModulesIGBT MODULE1200V / 300A / 1 in one packageFeaturesHigh speed switchingVoltage driveLow Inductance module structureApplicationsInverter DB for Motor DriveAC and DC Servo Drive Amplifier (DB)Active PFCIndustrial machinesMaximum Ratings and Characteristics Absolute Maximum Ratings (at TC=25
Datasheet: 1MBI200L-120 , 1MBI200NK-060 , 1MBI200S-120 , 1MBI200SA-120 , 1MBI200U4H-120L-50 , 1MBI2400U4D-120 , 1MBI2400U4D-170 , 1MBI300F-060 , IKW75N60T , 1MBI300HH-120L-50 , 1MBI300NN-120 , 1MBI300S-120 , 1MBI300U2H-060L-50 , 1MBI30L-060 , 1MBI3600U4D-120 , 1MBI3600U4D-170 , 1MBI400HH-120L-50 .
History: FGD3N60UNDF | 2M410B1 | MMG50HD120XT6TC | TA49017 | APT40GP90B2DQ2G | IXSH30N60 | IKB30N65ES5
Keywords - 1MBI300F-120 transistor datasheet
1MBI300F-120 cross reference
1MBI300F-120 equivalent finder
1MBI300F-120 lookup
1MBI300F-120 substitution
1MBI300F-120 replacement
History: FGD3N60UNDF | 2M410B1 | MMG50HD120XT6TC | TA49017 | APT40GP90B2DQ2G | IXSH30N60 | IKB30N65ES5



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