1MBI75L-060 Datasheet and Replacement
Type Designator: 1MBI75L-060
Type: IGBT
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 300 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 75 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.7 V @25℃
Tjⓘ - Maximum Junction Temperature: 150 ℃
trⓘ - Rise Time, typ: 300 nS
Package: MODULE
- IGBT Cross-Reference
1MBI75L-060 Datasheet (PDF)
1mbi75u4f-120l-50.pdf
http://www.fujielectric.com/products/semiconductor/1MBI75U4F-120L-50 IGBT ModulesIGBT MODULE (U series)1200V / 75A / 1 in one packageFeaturesHigh speed switchingVoltage driveLow Inductance module structureApplicationsInverter DB for Motor DriveAC and DC Servo Drive Amplifier (DB)Active PFCIndustrial machinesMaximum Ratings and Characteristics Absolute Maximum Ratings
Datasheet: AP05G120SW-HF , TSG10N120CN , AP05G120NSW-HF , AP20GT60SW , AP20GT60W , CI15T60 , MMIX4B12N300 , NGD8205A , IHW20N135R5 , IXYP8N90C3D1 , APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W .
History: NCE30TD60BP | FD200R12PT4_B6
Keywords - 1MBI75L-060 transistor datasheet
1MBI75L-060 cross reference
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History: NCE30TD60BP | FD200R12PT4_B6
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IGBT: G50T65LBBW | G50T65DS | G40N120D | G25T120D | DHG60T65D | DGF30F65M2 | DGE20F65M2 | DGD06F65M2 | DGC75F65M | DGC75F120M2 | DGC60F65M
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