1MBI75L-060 PDF and Equivalents Search

 

1MBI75L-060 Specs and Replacement

Type Designator: 1MBI75L-060

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 300 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 75 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.7 V @25℃

tr ⓘ - Rise Time, typ: 300 nS

Package: MODULE

 1MBI75L-060 Substitution

- IGBT ⓘ Cross-Reference Search

 

1MBI75L-060 datasheet

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 1mbi75l-060.pdf pdf_icon

1MBI75L-060

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 1mbi75u4f-120l-50.pdf pdf_icon

1MBI75L-060

http //www.fujielectric.com/products/semiconductor/ 1MBI75U4F-120L-50 IGBT Modules IGBT MODULE (U series) 1200V / 75A / 1 in one package Features High speed switching Voltage drive Low Inductance module structure Applications Inverter DB for Motor Drive AC and DC Servo Drive Amplifier (DB) Active PFC Industrial machines Maximum Ratings and Characteristics Absolute Maximum Ratings... See More ⇒

Specs: 1MBI600NN-060 , 1MBI600NP-060 , 1MBI600PX-120 , 1MBI600PX-140 , 1MBI600S-120 , 1MBI600U4-120 , 1MBI600U4B-120 , 1MBI600V-120-50 , RJH60F7BDPQ-A0 , 1MBI800U4B-120 , 1MBI800UG-330 , 1MBI900V-120-50 , 2MBI1000VXB-170E-50 , 2MBI100HB-120-50 , 2MBI100J-120 , 2MBI100N-060 , 2MBI100N-120 .

History: 2MBI150N-060 | 2MBI100NB-120

Keywords - 1MBI75L-060 transistor spec

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