All IGBT. 1MBI75L-060 Datasheet

 

1MBI75L-060 Datasheet and Replacement


   Type Designator: 1MBI75L-060
   Type: IGBT
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 300 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 75 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.7 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6 V
   Tj ⓘ - Maximum Junction Temperature: 150 ℃
   tr ⓘ - Rise Time, typ: 300 nS
   Package: MODULE
 

 1MBI75L-060 substitution

   - IGBT ⓘ Cross-Reference Search

 

1MBI75L-060 Datasheet (PDF)

 ..1. Size:768K  fuji
 1mbi75l-060.pdf pdf_icon

1MBI75L-060

 8.1. Size:261K  fuji
 1mbi75u4f-120l-50.pdf pdf_icon

1MBI75L-060

http://www.fujielectric.com/products/semiconductor/1MBI75U4F-120L-50 IGBT ModulesIGBT MODULE (U series)1200V / 75A / 1 in one packageFeaturesHigh speed switchingVoltage driveLow Inductance module structureApplicationsInverter DB for Motor DriveAC and DC Servo Drive Amplifier (DB)Active PFCIndustrial machinesMaximum Ratings and Characteristics Absolute Maximum Ratings

Datasheet: 1MBI600NN-060 , 1MBI600NP-060 , 1MBI600PX-120 , 1MBI600PX-140 , 1MBI600S-120 , 1MBI600U4-120 , 1MBI600U4B-120 , 1MBI600V-120-50 , STGB10NB37LZ , 1MBI800U4B-120 , 1MBI800UG-330 , 1MBI900V-120-50 , 2MBI1000VXB-170E-50 , 2MBI100HB-120-50 , 2MBI100J-120 , 2MBI100N-060 , 2MBI100N-120 .

History: OST60N65HSXF | VS-GB200TH120N | IXGH72N60A3

Keywords - 1MBI75L-060 transistor datasheet

 1MBI75L-060 cross reference
 1MBI75L-060 equivalent finder
 1MBI75L-060 lookup
 1MBI75L-060 substitution
 1MBI75L-060 replacement

 

 
Back to Top

 


 
.