All IGBT. 2MBI50J-060 Datasheet

 

2MBI50J-060 Datasheet and Replacement


   Type Designator: 2MBI50J-060
   Type: IGBT + Anti-Parallel Diode + Built-in Zener Diodes
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 150 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 50 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.7 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.5 V
   Tj ⓘ - Maximum Junction Temperature: 150 ℃
   tr ⓘ - Rise Time, typ: 200 nS
   Package: MODULE
 

 2MBI50J-060 substitution

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2MBI50J-060 Datasheet (PDF)

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2MBI50J-060

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 2mbi50f-120.pdf pdf_icon

2MBI50J-060

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 2mbi50l-060.pdf pdf_icon

2MBI50J-060

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2MBI50J-060

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Datasheet: 2MBI450U4N-120-50 , 2MBI450U4N-170-50 , 2MBI450VE-120-50 , 2MBI450VH-120-50 , 2MBI450VJ-120-50 , 2MBI450VN-120-50 , 2MBI450VN-170-50 , 2MBI50F-120 , TGD30N40P , 2MBI50L-060 , 2MBI50L-120 , 2MBI50N-060 , 2MBI50N-120 , 2MBI550VJ-170-50 , 2MBI550VN-170-50 , 2MBI600NT-060 , 2MBI600U2E-060 .

History: VS-GB300TH120U | IXGN50N60B

Keywords - 2MBI50J-060 transistor datasheet

 2MBI50J-060 cross reference
 2MBI50J-060 equivalent finder
 2MBI50J-060 lookup
 2MBI50J-060 substitution
 2MBI50J-060 replacement

 

 
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