2MBI800U4G-170 PDF and Equivalents Search

 

2MBI800U4G-170 Specs and Replacement

Type Designator: 2MBI800U4G-170

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 4800 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1700 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 1200 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.47 V @25℃

tr ⓘ - Rise Time, typ: 1250 nS

Package: MODULE

 2MBI800U4G-170 Substitution

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2MBI800U4G-170 datasheet

 ..1. Size:443K  fuji
 2mbi800u4g-170.pdf pdf_icon

2MBI800U4G-170

2MBI800U4G-170 IGBT Modules IGBT MODULE (U series) 1700V / 800A / 2 in one package Features High speed switching Voltage drive Low Inductance module structure Applications Inverter for Motor Drive AC and DC Servo Drive Amplifier Uninterruptible Power Supply Industrial machines, such as Welding machines Maximum Ratings and Characteristics Absolute Maximum Ratings (at Tc=25 C unles... See More ⇒

 2.1. Size:308K  fuji
 2mbi800u4g-120.pdf pdf_icon

2MBI800U4G-170

http //www.fujielectric.com/products/semiconductor/ 2MBI800U4G-120 IGBT Modules IGBT MODULE (U series) 1200V / 800A / 2 in one package Features High speed switching Voltage drive Low Inductance module structure Applications Inverter for Motor Drive AC and DC Servo Drive Amplifier Uninterruptible Power Supply Industrial machines, such as Welding machines Maximum Ratings and Characte... See More ⇒

Specs: 2MBI75L-120, 2MBI75N-060, 2MBI75N-120, 2MBI75P-140, 2MBI75S-120, 2MBI75U4A-120, 2MBI75VA-120-50, 2MBI800U4G-120, XNF15N60T, 2MBI900VXA-120P-50, 4MBI300VG-120R-50, 4MBI400VG-060R-50, 6MBI100F-060, 6MBI100U2B-060, 6MBI100VA-060-50, 6MBI100VA-120-50, 6MBI100VB-120-50

Keywords - 2MBI800U4G-170 transistor spec

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