All IGBT. 2MBI800U4G-170 Datasheet

 

2MBI800U4G-170 Datasheet and Replacement


   Type Designator: 2MBI800U4G-170
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 4800 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1700 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 1200 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.47 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 7.5 V
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 1250 nS
   Package: MODULE
      - IGBT Cross-Reference

 

2MBI800U4G-170 Datasheet (PDF)

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2MBI800U4G-170

2MBI800U4G-170 IGBT ModulesIGBT MODULE (U series)1700V / 800A / 2 in one packageFeaturesHigh speed switchingVoltage driveLow Inductance module structureApplicationsInverter for Motor DriveAC and DC Servo Drive AmplifierUninterruptible Power SupplyIndustrial machines, such as Welding machinesMaximum Ratings and Characteristics Absolute Maximum Ratings (at Tc=25C unles

 2.1. Size:308K  fuji
2mbi800u4g-120.pdf pdf_icon

2MBI800U4G-170

http://www.fujielectric.com/products/semiconductor/2MBI800U4G-120 IGBT ModulesIGBT MODULE (U series)1200V / 800A / 2 in one packageFeaturesHigh speed switchingVoltage driveLow Inductance module structureApplicationsInverter for Motor DriveAC and DC Servo Drive AmplifierUninterruptible Power SupplyIndustrial machines, such as Welding machinesMaximum Ratings and Characte

Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , GT30F131 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

History: MIO1800-17E10 | NGTB25N120SWG | MMG75J120UZ6TN | 2MBI75VA-120-50 | IXST40N60B | SKM150GAR123D

Keywords - 2MBI800U4G-170 transistor datasheet

 2MBI800U4G-170 cross reference
 2MBI800U4G-170 equivalent finder
 2MBI800U4G-170 lookup
 2MBI800U4G-170 substitution
 2MBI800U4G-170 replacement

 

 
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